参数资料
型号: DDRSDRAM
厂商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: DDR SDRAM Specification Version 0.61
中文描述: DDR SDRAM的规格版本0.61
文件页数: 46/49页
文件大小: 750K
代理商: DDRSDRAM
- 46 of 63 -
REV. 0.61 August 9. '99
128Mb DDR SDRAM
Target
Temperature (Tjunction)
Typical 50
°
C
Minimum 0
°
C
Maximum 0
°
C
Vdd/Vddq
Normal 2.5V
Minimum 2.3V
Maximum 2.7V
The adove characteristics are specied under best, worst and normal process variation/conditions
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Normal
Low
Normal
High
Minimum
Maximum
Normal
Low
Normal
High
Minimum
Maximum
0.1
5.7
6.4
4.3
8.3
-5.8
-7.2
-4.3
-8.6
0.2
11.5
12.7
8.7
16.5
-11.5
-13.7
-8.7
-17.0
0.3
17.1
19.0
13.0
24.4
-17.1
-20.0
-13.0
-25.3
0.4
22.7
25.1
17.4
32.0
-22.6
-26.1
-17.4
-33.6
0.5
28.1
31.1
21.7
39.4
-28.1
-32.2
-21.7
-41.7
0.6
32.6
36.9
26.1
46.6
-32.4
-38.2
-26.1
-49.6
0.7
37.2
41.7
30.4
53.6
-35.9
-44.2
-30.4
-57.5
0.8
41.2
47.0
34.7
59.6
-38.8
-50.1
-34.0
-65.2
0.9
44.8
52.1
37.4
65.9
-41.3
-56.0
-36.0
-72.9
1.0
48.4
56.9
40.2
72.0
-43.4
-61.8
-36.5
-80.4
1.1
51.0
61.5
42.3
77.8
-45.1
-67.5
-36.8
-87.7
1.2
53.0
65.9
43.6
83.3
-46.4
-73.2
-37.0
-94.9
1.3
54.6
70.0
44.4
88.5
-47.2
-78.9
-37.2
-102.0
1.4
55.9
74.0
44.7
93.5
-47.6
-84.6
-37.4
-109.0
1.5
56.7
77.6
45.0
97.9
-47.8
-90.1
-37.6
-116.0
1.6
57.1
81.0
45.3
102.3
-48.1
-95.6
-37.8
-123.0
1.7
57.5
84.1
45.7
105.8
-48.2
-101.0
-37.9
-129.0
1.8
58.0
87.0
46.1
109.3
-48.4
-106.0
-38.0
-136.0
1.9
58.5
89.9
46.3
112.8
-48.6
-112.0
-38.1
-142.0
2.0
59.0
91.7
46.6
116.3
-48.7
-117.0
-38.2
-148.0
2.1
59.3
93.5
46.8
119.3
-48.9
-122.0
-38.3
-154.0
2.2
59.7
95.2
47.0
122.2
-49.1
-127.0
-38.4
-160.0
2.3
60.2
96.1
47.1
124.9
-49.2
-132.0
-38.5
-166.0
2.4
60.5
97.0
47.2
127.4
-49.3
-137.0
-38.6
-171.0
2.5
60.9
97.9
47.4
129.5
-49.5
-142.0
-38.7
-177.0
Table 17. Pull down and pull up current values
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