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参数资料
| 型号： | HY27SA081G1M-VPEB |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48 |
| 封装： | 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 |
| 文件页数： | 12/45页 |
| 文件大小： | 675K |
| 代理商： | HY27SA081G1M-VPEB |
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This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.3 / May. 2004
2
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V
: HY27UAXX1G1M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M
1.8V Operation Product : TBD
Memory Cell Array
- 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks
PAGE SIZE
- x8 device: (512 + 16 spare) Bytes
: HY27(U/S)A081G1M
- x16 device: (256 + 8 spare) Words
: HY27(U/S)A161G1M
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
: HY27(U/S)A081G1M
- x16 device: (8K + 256 spare) Words
: HY27(U/S)A161G1M
PAGE READ / PROGRAM
- Random access: 12us (max)
- Sequential access: 50ns (min)
- Page program time: 200us (typ)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
CACHE PROGRAM MODE
- Internal Cache Register to improve the program
throughput
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27(U/S)A(08/16)1G1M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)A(08/16)1G1M-T (Lead)
- HY27(U/S)A(08/16)1G1M-TP (Lead Free)
- HY27(U/S)A08121A-V(P)
: 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27(U/S)A081G1M-V (Lead)
- HY27(U/S)A081G1M-VP (Lead Free)
- HY27(U/S)A(08/16)121M-F(P)
: 63-Ball FBGA (8.5 x 15 x 1.2 mm)
- HY27(U/S)A(08/16)1G1M-F (Lead)
- HY27(U/S)A(08/16)1G1M-FP (Lead Free)
相关PDF资料 |
PDF描述 |
|---|---|
| HY27UA081G1M-TIB | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY27SA161G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA1G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SAXXX | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2A | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27SF081G2A-F(P) | 制造商:SK Hynix Inc 功能描述: |
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