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参数资料
| 型号： | HY27SA081G1M-VPEB |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48 |
| 封装： | 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 |
| 文件页数： | 5/45页 |
| 文件大小： | 675K |
| 代理商： | HY27SA081G1M-VPEB |
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Rev 0.3 / May. 2004
13
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Once the Read A and Read C commands have been issued the pointer remains in the respective areas until another
pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been
executed in Area B the pointer returns automatically to Area A.
The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)
can be issued before the program command 80h is issued (see Figure 9).
Figure 8. Pointer Operation
Figure 9. Pointer Operations for Programming
Area A
(00h)
Area B
(01h)
Area C
(50h)
Bytes 0-255
Bytes 256-511
Bytes
512-527
A
B
C
Pointer
(00h, 01h, 50h)
x8 Devices
Page Buffer
Area C
(50h)
Words
256-263
C
x16 Devices
Page Buffer
Area A
(00h)
Word 0-256
A
Pointer
(00h, 50h)
10h
80h
01h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
01h
Data
Input
AREA B
AREA B, C can be programmed depending on how much data is input.
The 01h command must be re-issued before each program.
10h
80h
00h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
00h
Data
Input
AREA A
AREA A, B, C can be programmed depending on how much data is input.
Subsequent 00h commands can be omitted.
10h
80h
50h
Address
Inputs
80h
Data
Input
10h
Address
Inputs
50h
Data
Input
AREA C
Only Areas C can be programmed.
Subsequent 50h commands can be omitted.
I/O
相关PDF资料 |
PDF描述 |
|---|---|
| HY27UA081G1M-TIB | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY27SA161G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA1G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SAXXX | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2A | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27SF081G2A-F(P) | 制造商:SK Hynix Inc 功能描述: |
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