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参数资料
| 型号： | HY27SA081G1M-VPEB |
| 厂商： | HYNIX SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 12000 ns, PDSO48 |
| 封装： | 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, WSOP1-48 |
| 文件页数： | 8/45页 |
| 文件大小： | 675K |
| 代理商： | HY27SA081G1M-VPEB |
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Rev 0.3 / May. 2004
16
Preliminary
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Figure 12. Sequential Row Read Operation
Figure 13. Sequential Row Read Block Diagrams
Busy
tBLBH1
(Read Busy time)
tBLBH1
Address Inputs
I/O
00h/
01h/50h
1st
Page Output
2nd
Page Output
Nth
Page Output
Command
Code
RB
Area A
(1st half Page)
Area B
Area C
Read A Command, x8 Devices
(2nd half Page) (Spare)
Block
1st Page
2nd Page
Nth Page
Read B Command, x8 Devices
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
Block
1st Page
2nd Page
Nth Page
Area A
Area C
(Spare)
Read A Command, x16 Devices
(main area)
1st Page
2nd Page
Nth Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
1st Page
2nd Page
Nth Page
Block
Area A
(1st half Page)
Area B
Area C
Read A Command, x8 Devices
(2nd half Page) (Spare)
Block
1st Page
2nd Page
Nth Page
Area A
(1st half Page)
Area A
(1st half Page)
Area B
Area C
Read A Command, x8 Devices
(2nd half Page) (Spare)
Block
1st Page
2nd Page
Nth Page
Block
1st Page
2nd Page
Nth Page
Read B Command, x8 Devices
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
Block
1st Page
2nd Page
Nth Page
Read B Command, x8 Devices
Area A
(1st half Page)
Area A
(1st half Page)
Area B
(2nd half Page)
Area C
(Spare)
Block
1st Page
2nd Page
Nth Page
Block
1st Page
2nd Page
Nth Page
Area A
Area C
(Spare)
Read A Command, x16 Devices
(main area)
1st Page
2nd Page
Nth Page
Block
Area A
Area C
(Spare)
Read A Command, x16 Devices
(main area)
1st Page
2nd Page
Nth Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
1st Page
2nd Page
Nth Page
Block
Area A
Area A/B
Area C
(Spare)
Read C Command, x8/x16 Devices
1st Page
2nd Page
Nth Page
Block
1st Page
2nd Page
Nth Page
Block
相关PDF资料 |
PDF描述 |
|---|---|
| HY27UA081G1M-TIB | 128M X 8 FLASH 3.3V PROM, 12000 ns, PDSO48 |
| HY27US08121B-TPIS | 64M X 8 FLASH 3.3V PROM, 18 ns, PDSO48 |
| HY27US08121B-FIB | 64M X 8 FLASH 3.3V PROM, 18 ns, PBGA63 |
| HY27US081G1MSES | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
| HY27US081G1MTCS | 128M X 8 FLASH 2.7V PROM, 45 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HY27SA161G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SA1G1M | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SAXXX | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory |
| HY27SF081G2A | 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| HY27SF081G2A-F(P) | 制造商:SK Hynix Inc 功能描述: |
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