参数资料
型号: IDT72T6360L6BBGI
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: 微控制器/微处理器
英文描述: SPECIALTY MICROPROCESSOR CIRCUIT, PBGA324
封装: 19 X 19 MM, 1 MM PITCH, PLASTIC, BGA-324
文件页数: 50/51页
文件大小: 508K
代理商: IDT72T6360L6BBGI
8
IDT72T6360 2.5V, SEQUENTIAL FLOW-CONTROL DEVICE
x9, x18, x36 BIT WIDE CONFIGURATION
COMMERCIALANDINDUSTRIAL
TEMPERATURERANGES
OCTOBER 10, 2005
WRITE PORT INTERFACE (Continued)
WCLK/WR
V8
WriteClock/
INPUT
This is a dual function pin. If synchronous operation of the write port is selected, the rising
WriteStrobe
3.3V or
edge of WCLK writes data into the sequential flow-control device when
WEN is enabled.
2.5V LVTTL If asynchronous operation of the write port is selected, a rising edge on WR writes data into
the sequential flow-control device without the need of a free-running input write clock.
WCS
T7
WriteChipSelect
INPUT
Synchronous three-state control of the data inputs. Provides a means of controlling the
3.3V or
data inputs synchronous to WCLK. Typically used to avoid bus-contention when multiple
2.5V LVTTL devices are sharing the same input data bus.
WEN
V7
WriteEnable
INPUT
WEN enables WCLK for writing data into the sequential flow-control device. If
3.3V or
asynchronous mode is selected on the write port, this signal should be tied to GND.
2.5V LVTTL
MEMORY INTERFACE
A[12:0]
See Pin
Memory Address
OUTPUT
Output address bus to be connected to the input address bus of the external memory to
No. table
Bus
SSTL_2
provide row and column address.
BA[1:0]
BA1-B11
Memory Bank
OUTPUT
Address bits to be connected to the external memory's BA inputs to determine which bank
BA0-C11
Address Input Bit
SSTL_2
an ACTIVE, READ, WRITE, or PRECHARGE command is being applied.
CK
C7
Memory Clock
OUTPUT
Clock output to be connected to the external memory's input clock.
SSTL_2
CK
A7
Memory Clock
OUTPUT
Differential clock output to be connected to the external memory's differential input clock.
Inverted
SSTL_2
CAS
D12
Memory Column
OUTPUT
Output enable signal to be connected to the external memory's
CAS pin to activate and
Address Strobe
SSTL_2
deactivate the column address strobe.
DQ[63:0]
See Pin
Memory Data Bus
Bi-Directional Input/output data bus for the external memory's data bus.
No. table
SSTL_2
DQS[7:0]
See Pin
Memory Data
Bi-Directional Input/output data strobe to be connected to the external memory's data strobe.
No. table
Strobe
SSTL_2
RAS
A12
Memory Row
OUTPUT
Output strobe signal to be connected to the external memory's
RAS pin to activate and
Address Strobe
SSTL_2
deactivate the row address strobe.
WE
A11
MemoryWrite
OUTPUT
Output strobe signal to be connected to the external memory's
WE pin to activate and
Enable
SSTL_2
deactivate the write address strobe.
CONTROL AND FEATURE INTERFACE
BM[3:0](1)
See Pin
Bus-MatchingBit
INPUT
Selects the bus width of the read and write ports.
No. table
3.3V or
2.5V LVTTL
FSEL[1:0](1)
FSEL1-P6 Flag Select Bit
INPUT
During master reset, these inputs will select one of four default values for the programmable
FSEL0-R6
3.3V or
flags
PAE and PAF. The selected value will apply to both PAE and PAF offset.
2.5V LVTTL
FWFT(1)
U7
First Word Fall
INPUT
During master reset, a HIGH on this input selects FWFT timing mode. A LOW selects IDT
Through
3.3V or
Standardtimingmode.
2.5V LVTTL
IDEM(1)
R7
IDT Standard Mode
INPUT
This select pin is used for depth expansion configuration in IDT Standard mode. If this pin
Depth Expansion
3.3V or
is tied HIGH, then the
FF/IR signal will be inverted to provide a seamless depth
Mode Select
2.5V LVTTL expansion interface. If depth expansion in FWFT mode is desired, this pin should be
tied to GND. If no depth expansion is used, this pin should be tied to GND.
IOSEL(1)
P7
I/O VDDQ Select
INPUT
This input determines whether the inputs and outputs will tolerate a 2.5V or 3.3V voltage
3.3V or
signals. If IOSEL is HIGH, then all I/Os will be 2.5V tolerant. If IOSEL is LOW, then all I/Os
2.5V LVTTL will be 3.3V tolerant. See table 15, for a list of affected I/O signals.
PIN DESCRIPTIONS (Continued)
Symbol
Pin No.
Name
I/O TYPE
Description
Location
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