参数资料
型号: M38D59GC-XXXFP
元件分类: 微控制器/微处理器
英文描述: 8-BIT, MROM, 6.25 MHz, MICROCONTROLLER, PQFP80
封装: 14 X 20 MM, 0.80 MM PITCH, PLASTIC, QFP-80
文件页数: 122/142页
文件大小: 2004K
代理商: M38D59GC-XXXFP
Rev.3.04
May 20, 2008
Page 80 of 134
REJ03B0158-0304
38D5 Group
Block Erase Command (2016/D016)
By writing the command code “2016” in the first bus cycle and
the confirmation command code “D016” and the block address in
the second bus cycle that follows, the block erase (erase and
erase verify) operation starts for the block address of the flash
memory to be specified.
Whether the block erase operation is completed can be confirmed
by read status register or the RY/BY status flag of flash memory
control register. To read the status register, write the status
register command “7016”. The status register bit 7 (SR7) is set to
“0” at the same time the block erase operation starts and returned
to “1” upon completion of the block erase operation. The read
status mode at this time remains active until the read array
command (“FF16”) is written.
The RY/BY status flag register is set to “0” during block erase
operation and “1” when the block erase operation is completed as
is the status register bit 7 (SR7).
After the block erase ends, erase results can be checked by
reading the status register. For details, refer to the section where
the status register is detailed.
Fig 76. Erase flowchart
Write “2016
Write “D016
Block address
Read status register
SR7 = “1”?
or
RY/BY = “1”?
Erase completed
(write read command
“FF16”)
NO
YES
Start
SR5 = “0”?
Erase error
YES
NO
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