- 您现在的位置：买卖IC网 > PDF目录385639 > MT28C3224P20 (Micron Technology, Inc.) FLASH AND SRAM COMBO MEMORY PDF资料下载
参数资料
| 型号： | MT28C3224P20 |
| 厂商： | Micron Technology, Inc. |
| 元件分类： | DRAM |
| 英文描述： | FLASH AND SRAM COMBO MEMORY |
| 中文描述： | 闪存和SRAM式内存 |
| 文件页数： | 7/42页 |
| 文件大小： | 498K |
| 代理商： | MT28C3224P20 |
第1页第2页第3页第4页第5页第6页当前第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页
7
2 Meg x 16 Page Flash 256K x 16 SRAM Combo Memory
MT28C3224P20_3.p65 – Rev. 3, Pub. 7/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
2 MEG x 16 PAGE FLASH
256K x 16 SRAM COMBO MEMORY
ADVANCE
NOTE:
1. Two devices may not drive the memory bus at the same time.
2. Allowable Flash read modes include read array, read query, read configuration, and read status.
3. Outputs are dependent on a separate device controlling bus outputs.
4. Modes of the Flash and SRAM can be interleaved so that while one is disabled, the other controls outputs.
5. SRAM is enabled and/or disabled with the logical function: S_CE1# or S_CE2.
6. Simultaneous operations can exist, as long as the operations are interleaved such that only one device attempts to
control the bus outputs at a time.
7. Data output on lower byte only; upper byte High-Z.
8. Data output on upper byte only; lower byte High-Z.
9. Data input on lower byte only.
10. Data input on upper byte only.
TRUTH TABLE – FLASH
FLASH SIGNALS
F_CE#
SRAM SIGNALS
MEMORY OUPUT
MEMORY
BUS CONTROL
Flash
Flash
Other
Other
Other
MODES
F_RP#
F_OE# F_WE# S_CE1# S_CE2 S_OE# S_WE# S_UB# S_LB#
DQ0–DQ15
NOTES
Read
Write
Standby
Output Disable
Reset
H
H
H
H
L
L
L
H
L
X
L
H
X
H
X
H
L
X
H
X
SRAM must be High-Z
D
OUT
D
IN
High-Z
High-Z
High-Z
1, 2, 3
1
4
4, 5
4, 6
SRAM any mode allowable
TRUTH TABLE – SRAM
FLASH SIGNALS
F_CE#
SRAM SIGNALS
MEMORY OUPUT
MEMORY
BUS CONTROL
MODES
F_RP#
F_OE# F_WE# S_CE1# S_CE2 S_OE# S_WE# S_UB# S_LB#
DQ0–DQ15
NOTES
Read
DQ0–DQ15
DQ0–DQ7
DQ8–DQ15
Write
DQ0–DQ15
DQ0–DQ7
DQ8–DQ15
Standby
L
L
L
H
H
H
L
L
L
H
H
H
L
H
L
L
L
H
SRAM
SRAM
SRAM
D
OUT
D
OUT
LB
D
OUT
UB
1, 3
7
8
Flash must be High-Z
L
L
L
H
X
L
H
H
H
X
L
H
H
H
H
X
X
X
L
L
L
X
X
X
L
H
L
X
X
X
L
L
H
X
X
X
SRAM
SRAM
SRAM
Other
Other
Other
D
IN
D
IN
LB
D
IN
UB
High-Z
High-Z
High-Z
1, 3
9
10
4
4
4
Flash any mode allowable
Output Disable
相关PDF资料 |
PDF描述 |
|---|---|
| MT28F200B3 | FLASH MEMORY |
| MT28F200B5 | FLASH MEMORY |
| MT28F320A18 | FLASH MEMORY |
| MT2D18 | 1 Meg x 8 DRAM Module(5V，1M x 8 动态RAM模块) |
| MT46V16M4 | 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组，双数据速率同步动态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT28C3224P20FL-80 BET | 制造商:Micron Technology Inc 功能描述: |
| MT28C3224P20FL-80 BET TR | 制造商:Micron Technology Inc 功能描述: |
| MT28C6428P18 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH AND SRAM COMBO MEMORY |
| MT28C6428P18FM-85 BET | 制造商:Micron Technology Inc 功能描述: |
| MT28C6428P18FM-85 BET TR | 制造商:Micron Technology Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。