参数资料
型号: MT46V32M81AZ4-6T:G
元件分类: DRAM
英文描述: 32M X 4 DDR DRAM, 0.75 ns, PDSO66
封装: 0.400 INCH, PLASTIC, TSOP-66
文件页数: 19/82页
文件大小: 2866K
128Mb: x4, x8, x16
DDR SDRAM
09005aef8074a655
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MBDDRx4x8x16_2.fm - Rev. J 7/04 EN
26
2000 Micron Technology, Inc. All rights reserved.
Figure 17: Terminating a READ Burst
NOTE:
1. DO n = data-out from column n.
2. Burst length = 4 or 8.
3. Subsequent element of data-out appears in the programmed order following DO n.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
5. BST = BURST TERMINATE command, page remains open.
CK
CK#
COMMAND
READ
BST
5
NOP
ADDRESS
Bank a,
Col n
READ
BST
5
NOP
Bank a,
Col n
CL = 2
CK
CK#
COMMAND
ADDRESS
DQ
DQS
CL = 2.5
DQ
DQS
DO
n
DO
n
T0
T1
T2
T3
T2n
T4
T5
T0
T1
T2
T3
T2n
T4
T5
DON’T CARE
TRANSITIONING DATA
READ
BST
5
NOP
Bank a,
Col n
CK
CK#
COMMAND
ADDRESS
DQ
DQS
DO
n
T0
T1
T2
T3
T3n
T4
T5
CL = 3
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