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参数资料
| 型号： | MT46V32M81AZ4-6T:G |
| 元件分类： | DRAM |
| 英文描述： | 32M X 4 DDR DRAM, 0.75 ns, PDSO66 |
| 封装： | 0.400 INCH, PLASTIC, TSOP-66 |
| 文件页数： | 9/82页 |
| 文件大小： | 2866K |
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128Mb: x4, x8, x16
DDR SDRAM
09005aef8074a655
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MBDDRx4x8x16_2.fm - Rev. J 7/04 EN
17
2000 Micron Technology, Inc. All rights reserved.
DESELECT
The DESELECT function (CS# HIGH) prevents new
commands from being executed by the DDR SDRAM.
The DDR SDRAM is effectively deselected. Operations
already in progress are not affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to
instruct the selected DDR SDRAM to perform a NOP
(CS# is LOW with RAS#, CAS#, and WE# are HIGH).
This prevents unwanted commands from being regis-
tered during idle or wait states. Operations already in
progress are not affected.
LOAD MODE REGISTER
The mode registers are loaded via inputs A0–A11.
See mode register descriptions in the Register Defini-
tion section. The LOAD MODE REGISTER command
can only be issued when all banks are idle, and a sub-
sequent executable command cannot be issued until
tMRD is met.
ACTIVE
The ACTIVE command is used to open (or activate)
a row in a particular bank for a subsequent access. The
value on the BA0, BA1 inputs selects the bank, and the
address provided on inputs A0–A11 selects the row.
This row remains active (or open) for accesses until a
precharge command is issued to that bank. A pre-
charge command must be issued before opening a dif-
ferent row in the same bank.
READ
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1
inputs selects the bank, and the address provided on
inputs A0–Ai (where i = 8 for x16, 9 for x8, or 9, 11 for
x4) selects the starting column location. The value on
input A10 determines whether or not auto precharge is
used. If auto precharge is selected, the row being
accessed will be precharged at the end of the READ
burst; if auto precharge is not selected, the row will
remain open for subsequent accesses.
WRITE
The WRITE command is used to initiate a burst
write access to an active row. The value on the BA0,
BA1 inputs selects the bank, and the address provided
on inputs A0–Ai (where i = 8 for x16, 9 for x8, or 9, 11 for
x4) selects the starting column location. The value on
input A10 determines whether or not auto precharge is
used. If auto precharge is selected, the row being
accessed will be precharged at the end of the WRITE
burst; if auto precharge is not selected, the row will
remain open for subsequent accesses. Input data
appearing on the DQ is written to the memory array
subject to the DM input logic level appearing coinci-
dent with the data. If a given DM signal is registered
LOW, the corresponding data will be written to mem-
ory; if the DM signal is registered HIGH, the corre-
sponding data inputs will be ignored, and a WRITE will
not be executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate
the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent
row access a specified time (tRP) after the precharge
command is issued. Except in the case of concurrent
auto precharge, where a READ or WRITE command to
a different bank is allowed as long as it does not inter-
rupt the data transfer in the current bank and does not
violate any other timing parameters. Input A10 deter-
mines whether one or all banks are to be precharged,
and in the case where only one bank is to be pre-
charged, inputs BA0, BA1 select the bank. Otherwise
BA0, BA1 are treated as “Don’t Care.” Once a bank has
been precharged, it is in the idle state and must be
activated prior to any READ or WRITE commands
being issued to that bank. A PRECHARGE command
will be treated as a NOP if there is no open row in that
bank (idle state), or if the previously open row is
already in the process of precharging.
Auto Precharge
Auto precharge is a feature which performs the
same individual-bank precharge function described
above, but without requiring an explicit command.
This is accomplished by using A10 to enable auto pre-
charge in conjunction with a specific READ or WRITE
command. A precharge of the bank/row that is
addressed with the READ or WRITE command is auto-
matically performed upon completion of the READ or
WRITE burst. Auto precharge is nonpersistent in that it
is either enabled or disabled for each individual Read
or Write command. This device supports concurrent
auto precharge if the command to the other bank does
not interrupt the data transfer to the current bank.
Auto precharge ensures that the precharge is initi-
ated at the earliest valid stage within a burst. This “ear-
liest valid stage” is determined as if an explicit
PRECHARGE command was issued at the earliest pos-
sible time, without violating tRAS (MIN), as described
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46V32M82ZZ5-75 ES | 制造商:Micron Technology Inc 功能描述:32MX8 SDRAM DDR PLASTIC PBF FBGA 2.5V - Trays |
| MT46V32M82ZZ5-75EZ | 制造商:Micron Technology Inc 功能描述:32MX8 DDR SDRAM PLASTIC 2.5V - Trays |
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