参数资料
型号: MT46V32M81AZ4-6T:G
元件分类: DRAM
英文描述: 32M X 4 DDR DRAM, 0.75 ns, PDSO66
封装: 0.400 INCH, PLASTIC, TSOP-66
文件页数: 65/82页
文件大小: 2866K
128Mb: x4, x8, x16
DDR SDRAM
09005aef8074a655
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MBDDRx4x8x16_2.fm - Rev. J 7/04 EN
68
2000 Micron Technology, Inc. All rights reserved.
Figure 41: x16 Data Output Timing – tDQSQ, tQH, and Data Valid Window
NOTE:
1. DQ transitioning after DQS transition define tDQSQ window. LDQS defines the lower byte and UDQS defines the upper
byte.
2. DQ0, DQ1, DQ2, DQ3, DQ4, DQ5, DQ6, or DQ7.
3. tDQSQ is derived at each DQS clock edge and is not cumulative over time and begins with DQS transition and ends with
the last valid DQ transition.
4. tQH is derived from tHP: tQH = tHP - tQHS.
5. tHP is the lesser of tCL or tCH clock transition collectively when a bank is active.
6. The data valid window is derived for each DQS transition and is tQH minus tDQSQ.
7. DQ8, DQ9, DQ10, D11, DQ12, DQ13, DQ14, or DQ15.
DQ (Last data valid)2
DQ2
LDQS1
DQ (Last data valid)2
DQ (First data no longer valid)2
DQ0 - DQ7 and LDQS, collectively6
T2
T2n
T3
T3n
CK
CK#
T1
T2
T3
T4
T2n
T3n
tQH4
tDQSQ3
Data Valid
window
Data Valid
window
DQ (Last data valid)7
DQ7
UDQS1
DQ (Last data valid)7
DQ (First data no longer valid)7
DQ8 - DQ15 and UDQS, collectively6
T2
T2n
T3
T3n
tQH4
tDQSQ3
tHP5
tQH4
Data Valid
window
Data Valid
window
Data Valid
window
Data Valid
window
Data Valid
window
Upper
Byte
Lower
Byte
Data Valid
window
相关PDF资料
PDF描述
MT47H128M8HV-187ELIT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT47H128M8HQ-187ELAT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT48LC2M32B1TG-7 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
MT48LC32M4A2P-7ELIT:G 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
MT55L256L18FT-12TR 256K X 18 ZBT SRAM, 9 ns, PQFP100
相关代理商/技术参数
参数描述
MT46V32M82ZZ5-75 ES 制造商:Micron Technology Inc 功能描述:32MX8 SDRAM DDR PLASTIC PBF FBGA 2.5V - Trays
MT46V32M82ZZ5-75EZ 制造商:Micron Technology Inc 功能描述:32MX8 DDR SDRAM PLASTIC 2.5V - Trays