参数资料
型号: MT47H128M8HQ-187ELAT:E
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封装: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件页数: 1/133页
文件大小: 9170K
DDR2 SDRAM
MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks
Features
VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Duplicate output strobe (RDQS) option for x8
DLL to align DQ and DQS transitions with CK
8 internal banks for concurrent operation
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Selectable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Industrial temperature (IT) option
RoHS-compliant
Supports JEDEC clock jitter specification
Options1
Marking
Configuration
– 256 Meg x 4 (32 Meg x 4 x 8 banks)
256M4
– 128 Meg x 8 (16 Meg x 8 x 8 banks)
128M8
– 64 Meg x 16 (8 Meg x 16 x 8 banks)
64M16
FBGA package (Pb-free) – x16
– 84-ball FBGA (8mm x 12.5mm)
Rev. E, G, H
HR
FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 11.5mm)
Rev. E, G
HQ
FBGA package (Pb-free) – x4, x8
– 60-ball FBGA (8mm x 10mm) Rev. H
CF
FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 10mm) Rev. H
JN
FBGA package (lead solder) – x16
– 84-ball FBGA (8mm x 12.5mm)
Rev. E, G
HW
FBGA package (lead solder) – x4, x8
– 60-ball FBGA (8mm x 11.5mm)
Rev. E, G
HV
Timing – cycle time
– 1.875ns @ CL = 7 (DDR2-1066)
-187E
– 2.5ns @ CL = 5 (DDR2-800)
-25E
– 2.5ns @ CL = 6 (DDR2-800)
-25
– 3.0ns @ CL = 4 (DDR2-667)
-3E
– 3.0ns @ CL = 5 (DDR2-667)
-3
– 3.75ns @ CL = 4 (DDR2-533)
-37E
Self refresh
– Standard
None
– Low-power
L
Operating temperature
– Commercial (0°C ≤ TC ≤ 85°C)
None
– Industrial (–40°C ≤ TC ≤ 95°C;
–40°C
≤ TA ≤ 85°C)
IT
– Automotive (–40°C ≤ TC , TA ≤ 105C)
AT
Revision
:E/:G/:H
Note: 1. Not all options listed can be combined to
define an offered product. Use the Part
Catalog Search on www.micron.com for
product offerings and availability.
1Gb: x4, x8, x16 DDR2 SDRAM
Features
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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相关代理商/技术参数
参数描述
MT47H128M8HQ-25AT 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HQ-25EAT 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM