- 您现在的位置：买卖IC网 > PDF目录224506 > MT47H128M8HQ-187ELAT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60 PDF资料下载
参数资料
| 型号： | MT47H128M8HQ-187ELAT:E |
| 元件分类： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM, 0.35 ns, PBGA60 |
| 封装： | 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 |
| 文件页数： | 50/133页 |
| 文件大小： | 9170K |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页当前第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页
Electrical Specifications – Absolute Ratings
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 5: Absolute Maximum DC Ratings
Parameter
Symbol
Min
Max
Units
Notes
VDD supply voltage relative to VSS
VDD
–1.0
2.3
V
VDDQ supply voltage relative to VSSQ
VDDQ
–0.5
2.3
V
VDDL supply voltage relative to VSSL
VDDL
–0.5
2.3
V
Voltage on any ball relative to VSS
VIN, VOUT
–0.5
2.3
V
Input leakage current; any input 0V
≤ VIN ≤ VDD; all other
balls not under test = 0V
II
–5
5
A
Output leakage current; 0V
≤ VOUT ≤ VDDQ; DQ and ODT dis-
abled
IOZ
–5
5
A
VREF leakage current; VREF = Valid VREF level
IVREF
–2
2
A
Notes: 1. VDD, VDDQ, and VDDL must be within 300mV of each other at all times; this is not re-
quired when power is ramping down.
2. VREF ≤ 0.6 × VDDQ; however, VREF may be ≥ VDDQ provided that VREF ≤ 300mV.
3. Voltage on any I/O may not exceed voltage on VDDQ.
Temperature and Thermal Impedance
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 24), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 7 (page 25) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications” prior to using the thermal impedances
listed in Table 7. For designs that are expected to last several years and require the flexi-
bility to use several DRAM die shrinks, consider using final target theta values (rather
than existing values) to account for increased thermal impedances from the die size re-
duction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the TC specification is not exceeded. In applications where the device’s ambient temper-
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1Gb: x4, x8, x16 DDR2 SDRAM
Electrical Specifications – Absolute Ratings
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MT48LC2M32B1TG-7 | 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 |
| MT48LC32M4A2P-7ELIT:G | 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| MT55L256L18FT-12TR | 256K X 18 ZBT SRAM, 9 ns, PQFP100 |
| MT55L256L32FT-12 | 256K X 32 ZBT SRAM, 9 ns, PQFP100 |
| MT55L512V18PF-6 | 512K X 18 ZBT SRAM, 3.5 ns, PBGA165 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT47H128M8HQ-25AT | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM |
| MT47H128M8HQ-25EAT | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM |
发布紧急采购，3分钟左右您将得到回复。