参数资料
型号: MT47H128M8HQ-187ELAT:E
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, 0.35 ns, PBGA60
封装: 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60
文件页数: 96/133页
文件大小: 9170K
Figure 27: Nominal Slew Rate for tDS
VREF to AC
region
VREF to AC
region
Setup slew rate
rising signal
Setup slew rate
falling signal
Δ
TF
Δ
TR
VREF(DC) - VIL(AC)max
Δ
TF
=
VIH(AC)min - VREF(DC)
Δ
TR
=
Nominal
slew rate
VSS
DQS#1
DQS1
VDDQ
VIH(DC)min
VREF(DC)
VIL(AC)max
VIL(DC)max
VIH(AC)min
tDH
tDS
Nominal
slew rate
tDH
tDS
Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min.
Figure 28: Tangent Line for tDS
Δ
TF
Δ
TR
Setup slew rate
rising signal
Setup slew rate
falling signal
Tangent line (VREF[DC] - VIL[AC]max)
Δ
TF
=
Tangent line (VIH[AC]min- VREF[DC])
Δ
TR
=
tDH
tDS
tDH
tDS
VSS
DQS#1
DQS1
VDDQ
VIH(DC)min
VREF(DC)
VIL(AC)max
VIL(DC)max
VIH(AC)min
Nominal line
Tangent line
Nominal
line
Tangent line
VREF to AC
region
VREF to AC
region
Note: 1. DQS, DQS# signals must be monotonic between VIL(DC)max and VIH(DC)min.
1Gb: x4, x8, x16 DDR2 SDRAM
Input Slew Rate Derating
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
65
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数
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MT47H128M8HQ-25AT 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM
MT47H128M8HQ-25EAT 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM