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参数资料
| 型号： | MT47H128M8HQ-187ELAT:E |
| 元件分类： | DRAM |
| 英文描述： | 128M X 8 DDR DRAM, 0.35 ns, PBGA60 |
| 封装： | 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 |
| 文件页数： | 113/133页 |
| 文件大小： | 9170K |
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Extended Mode Register (EMR)
The extended mode register controls functions beyond those controlled by the mode
register; these additional functions are DLL enable/disable, output drive strength, on-
die termination (ODT), posted AL, off-chip driver impedance calibration (OCD), DQS#
enable/disable, RDQS/RDQS# enable/disable, and output disable/enable. These func-
tions are controlled via the bits shown in Figure 37. The EMR is programmed via the LM
command and will retain the stored information until it is programmed again or the
device loses power. Reprogramming the EMR will not alter the contents of the memory
array, provided it is performed correctly.
The EMR must be loaded when all banks are idle and no bursts are in progress, and the
controller must wait the specified time tMRD before initiating any subsequent opera-
tion. Violating either of these requirements could result in an unspecified operation.
Figure 37: EMR Definition
DLL
Posted CAS# R
TT
Out
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Extended mode
register (Ex)
Address bus
9
7
6
5
4
3
8
2
1
0
A10
A12
BA0
BA1
10
11
12
n
0
14
E1
0
1
Output Drive Strength
Full
Reduced
Posted CAS# Additive Latency (AL)3
0
1
2
3
4
5
6
Reserved
E3
0
1
0
1
0
1
0
1
E4
0
1
0
1
E5
0
1
0
1
DLL Enable
Enable (normal)
Disable (test/debug)
E0
15
E11
0
1
RDQS Enable
No
Yes
OCD Program
An2
ODS
R
TT
DQS#
E10
0
1
DQS# Enable
Enable
Disable
RDQS
R
TT (Nominal)
R
TT disabled
75Ω
150Ω
50Ω
E2
0
1
0
1
E6
0
1
0
1
Outputs
Enabled
Disabled
E12
0
1
0
1
Mode Register Set
Mode register (MR)
Extended mode register (EMR)
Extended mode register (EMR2)
Extended mode register (EMR3)
E15
0
0
1
E14
MRS
BA21
16
0
OCD Operation4
OCD exit
Reserved
Enable OCD defaults
E7
0
1
0
1
E8
0
1
0
1
E9
0
1
Notes: 1. E16 (BA2) is only applicable for densities
≥1Gb, reserved for future use, and must be pro-
grammed to “0.”
2. Mode bits (En) with corresponding address balls (An) greater than E12 (A12) are re-
served for future use and must be programmed to “0.”
3. Not all listed AL options are supported in any individual speed grade.
4. As detailed in the Initialization (page 86) section notes, during initialization of the
OCD operation, all three bits must be set to “1” for the OCD default state, then set to
“0” before initialization is finished.
1Gb: x4, x8, x16 DDR2 SDRAM
Extended Mode Register (EMR)
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. S 10/09 EN
80
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2004 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT47H128M8HQ-25AT | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM |
| MT47H128M8HQ-25EAT | 制造商:MICRON 制造商全称:Micron Technology 功能描述:DDR2 SDRAM |
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