参数资料
型号: MT46V32M81AZ4-6T:G
元件分类: DRAM
英文描述: 32M X 4 DDR DRAM, 0.75 ns, PDSO66
封装: 0.400 INCH, PLASTIC, TSOP-66
文件页数: 77/82页
文件大小: 2866K
128Mb: x4, x8, x16
DDR SDRAM
09005aef8074a655
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128MBDDRx4x8x16_2.fm - Rev. J 7/04 EN
79
2000 Micron Technology, Inc. All rights reserved.
Figure 52: Bank Write - With Auto Precharge
NOTE:
1. DIn = data-out from column n; subsequent elements are provided in the programmed order.
2. Burst length = 4 in the case shown.
3. Enable auto precharge.
4. ACT = ACTIVE, RA = Row Address, BA = Bank Address.
5. NOP commands are shown for ease of illustration; other commands may be valid at these times.
7. Although not requird by the Micron device, JEDEC specifies that DQS be a valid HIGH, LOW or some point on a valid
transition on or before this clock edge (T3n).
CK
CK#
CKE
A10
BA0, BA1
tCK
tCH
tCL
tIS
tIH
tIS
tIH
tIS
tIH
RA
tRCD
tRAS
tRP
tWR
T0
T1
T2
T3
T4
T5
T5n
T6
T7
T8
T4n
NOP5
COMMAND4
3
ACT
RA
Col n
WRITE2
NOP5
Bank x
NOP5
Bank x
NOP5
tDQSL tDQSH tWPST
DQ1
DQS
DM
DI
b
tDS
tDH
tDQSS (NOM)
DON’T CARE
TRANSITIONING DATA
tWPRES tWPRE
x4: A0-A9, A11
x8: A0-A9
x16: A0-A8
x8: A11
x16: A9, A11
7
T4n
-5B
-6/6T/6T
-75E/75Z
-75
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tCH
0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55
tCK
tCL
0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55
tCK
tCK (3)
5
7.5
––––
––
ns
tCK (2.5)
6
13
6
13
7.5
13
7.5
13
ns
tCK (2)
7.5
13
7.5
13
7.5
13
10
13
ns
tDH
0.40
0.45
0.5
ns
tDS
0.40
0.45
0.5
ns
tDQSH 0.35
0.35
tCK
tDQSL 0.35
0.35
tCK
tDQSS 0.72 1.28 0.75 1.25 0.75 1.25 0.75 1.25 tCK
tDSS
0.2
tCK
-5B
-6/6T/6T
-75E
-75Z/-75
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS
tDSH
0.2
tCK
tIH
S
0.6
0.8
1
ns
tIS
S
0.6
0.8
1
ns
tRAS
40 70,00
0
42 70,00
0
40 120,0
00
40 120,0
00
ns
tRCD
1518
1520
ns
tRP
15
18
15
20
ns
tWPRE 0.25
0.25
tCK
tWPRES
000
0
ns
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
tWR
15
ns
相关PDF资料
PDF描述
MT47H128M8HV-187ELIT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT47H128M8HQ-187ELAT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT48LC2M32B1TG-7 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
MT48LC32M4A2P-7ELIT:G 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
MT55L256L18FT-12TR 256K X 18 ZBT SRAM, 9 ns, PQFP100
相关代理商/技术参数
参数描述
MT46V32M82ZZ5-75 ES 制造商:Micron Technology Inc 功能描述:32MX8 SDRAM DDR PLASTIC PBF FBGA 2.5V - Trays
MT46V32M82ZZ5-75EZ 制造商:Micron Technology Inc 功能描述:32MX8 DDR SDRAM PLASTIC 2.5V - Trays