- 您现在的位置：买卖IC网 > PDF目录229297 > MT46V32M8FG-6TIT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60 PDF资料下载
参数资料
| 型号： | MT46V32M8FG-6TIT:G |
| 元件分类： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.7 ns, PBGA60 |
| 封装： | (8 X 14) MM, PLASTIC, FBGA-60 |
| 文件页数： | 13/93页 |
| 文件大小： | 3632K |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页当前第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
18
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
Stresses greater than those listed in Table 9 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 9:
Absolute Maximum Ratings
Parameter
Min
Max
Units
VDD supply voltage relative to VSS
–1V
+3.6V
V
VDDQ supply voltage relative to VSS
–1V
+3.6V
V
VREF and inputs voltage relative to VSS
–1V
+3.6V
V
I/O pins voltage relative to VSS
–0.5V
VDDQ + 0.5V
V
Storage temperature (plastic)
–55
+150
°C
Short circuit output current
–50
mA
Table 10:
DC Electrical Characteristics and Operating Conditions (-5B)
Notes: 1–5 and 17 apply to the entire table; Notes appear on page 35; VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V
Parameter/Condition
Symbol
Min
Max
Units
Notes
Supply voltage
VDD
+2.5
+2.7
V
I/O supply voltage
VDDQ
+2.5
+2.7
V
I/O reference voltage
VREF
0.49 × VDDQ
0.51 × VDDQ
V
I/O termination voltage (system)
VTT
VREF - 0.04
VREF + 0.04
V
Input high (logic 1) voltage
VIH(DC)VREF + 0.15
VDD + 0.3
V
Input low (logic 0) voltage
VIL(DC)–0.3
VREF - 0.15
V
Input leakage current:
Any input 0V
≤ VIN ≤ VDD, VREF pin 0V ≤ VIN ≤ 1.35V
(All other pins not under test = 0V)
II
–2
+2
A
Output leakage current:
(DQ are disabled; 0V
≤ VOUT ≤ VDDQ)
IOZ
–5
+5
A
Full-drive option output
levels (x4, x8, x16):
High current (VOUT =
VDDQ - 0.373V, minimum
VREF, minimum VTT)
IOH
–16.8
–
mA
Low current (VOUT =
0.373V, maximum VREF,
maximum VTT)
IOL
+16.8
–
mA
Reduced-drive option
output levels (Design
Revision F and K only):
High current (VOUT =
VDDQ - 0.373V, minimum
VREF, minimum VTT)
IOHR
–9
–
mA
Low current
(VOUT =
0.763V, maximum VREF,
maximum VTT)
IOLR
+9
–
mA
Ambient operating
temperatures
Commercial
TA
0+70
°C
Industrial
TA
–40
+85
°C
Automotive
TA
–40
+105
°C
相关PDF资料 |
PDF描述 |
|---|---|
| MT46V32M8BG-6AT:G | 32M X 8 DDR DRAM, 0.7 ns, PBGA60 |
| M29F800FB55N3E2 | 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| MC12L1NZGF | ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED |
| MD00S1NCQF | ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT |
| MD06L1NZGD | ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
|---|
发布紧急采购，3分钟左右您将得到回复。