参数资料
型号: MT46V64M4
厂商: Micron Technology, Inc.
英文描述: 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM)
中文描述: 16梅格× 4 × 4银行DDR SDRAM内存(1,600 × 4 × 4组,双数据速率同步动态RAM)的
文件页数: 11/69页
文件大小: 2410K
代理商: MT46V64M4
11
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
Table 2
CAS Latency (CL)
Read Latency
The READ latency is the delay, in clock cycles, be-
tween the registration of a READ command and the
availability of the first bit of output data. The latency
can be set to 2, or 2.5 clocks, as shown in Figure 2.
If a READ command is registered at clock edge
n
,
and the latency is
m
clocks, the data will be available
nominally coincident with clock edge
n + m
. Table 2
indicates the operating frequencies at which each CAS
latency setting can be used.
Reserved states should not be used as unknown
operation or incompatibility with future versions may
result.
Figure 2
CAS Latency
Operating Mode
The normal operating mode is selected by issuing a
MODE REGISTER SET command with bits A7-A12 each
set to zero, and bits A0-A6 set to the desired values. A DLL
reset is initiated by issuing a MODE REGISTER SET
command with bits A7 and A9-A12 each set to zero, bit
A8 set to one, and bits A0-A6 set to the desired values.
Although not required by the Micron device, JEDEC
specifications recommend when a LOAD MODE REGIS-
TER command is issued to reset the DLL, it should always
be followed by a LOAD MODE REGISTER command to
select normal operating mode.
All other combinations of values for A7-A12 are
reserved for future use and/or test modes. Test modes
and reserved states should not be used because un-
known operation or incompatibility with future ver-
sions may result.
CK
CK#
COMMAND
DQ
DQS
CL = 2
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
Burst Length = 4 in the cases shown
Shown with nominal tAC and nominal tDSDQ
CK
CK#
COMMAND
DQ
DQS
CL = 2.5
T0
T1
T2
T2n
T3
T3n
T0
T1
T2
T2n
T3
T3n
DON
T CARE
TRANSITIONING DATA
ALLOWABLE OPERATING
FREQUENCY (MHz)
SPEED
CL = 2
83 ≤
f
133
83 ≤
f
100
83 ≤
f
100
CL = 2.5
83 ≤
f
143
83 ≤
f
133
83 ≤
f
125
-7
-75
-8
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MT46V64M4_1 制造商:MICRON 制造商全称:Micron Technology 功能描述:Double Data Rate (DDR) SDRAM