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参数资料
| 型号： | MT46V64M4 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM) |
| 中文描述： | 16梅格× 4 × 4银行DDR SDRAM内存（1,600 × 4 × 4组，双数据速率同步动态RAM）的 |
| 文件页数： | 43/69页 |
| 文件大小： | 2410K |
| 代理商： | MT46V64M4 |
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43
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
ABSOLUTE MAXIMUM RATINGS*
V
DD
Supply Voltage
Relative to V
SS
......................................-1V to +3.6V
V
DD
Q Supply Voltage
Relative to V
SS
......................................-1V to +3.6V
V
REF
and Inputs Voltage
Relative to V
SS
.......................................-1V to +3.6V
I/O Pins Voltage
Relative to V
SS
......................... -0.5V to V
DD
Q +0.5V
Operating Temperature, T
A
(ambient) .. 0°C to +70°C
Storage Temperature (plastic) ........... -55°C to +150°C
Power Dissipation ................................................... 1W
Short Circuit Output Current ............................ 50mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1
–
5, 16; notes appear on pages 50
–
53) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V)
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Clock Input Voltage Level; CK and CK#
Clock Input Differential Voltage; CK and CK#
Clock Input Crossing Point Voltage; CK and CK#
INPUT LEAKAGE CURRENT
Any input 0V
≤
V
IN
≤
V
DD
, V
REF
pin 0V
≤
V
IN
≤
1.35V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q)
OUTPUT LEVELS: Full drive option - x4, x8, x16
High Current (V
OUT
= V
DD
Q-0.373V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.373V, maximum V
REF
, maximum V
TT
)
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (V
OUT
= V
DD
Q-0.763V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.763V, maximum V
REF
, maximum V
TT
)
SY MBOL
V
DD
V
DD
Q
V
REF
V
TT
V
IH
(
DC
)
V
IL
(
DC
)
V
IN
V
ID
V
IX
MIN
2.3
2.3
MAX
2.7
2.7
UNITS NOTES
V
V
V
V
V
V
V
V
V
41
41, 44
6, 44
7, 44
28
28
0.49
x
V
DD
Q 0.51
x
V
DD
Q
V
REF
- 0.04
V
REF
+ 0.15
-0.3
-0.3
0.36
1.15
V
REF
+ 0.04
V
DD
+ 0.3
V
REF
- 0.15
V
DD
Q + 0.3
V
DD
Q + 0.6
1.35
8
9
I
I
-2
2
μA
I
OZ
-5
5
μA
I
OH
I
OL
-16.8
16.8
–
–
mA
mA
37
I
OHR
I
OLR
-9
9
–
–
mA
mA
38
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46V64M4_1 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Double Data Rate (DDR) SDRAM |
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