参数资料
型号: MT46V64M4
厂商: Micron Technology, Inc.
英文描述: 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM)
中文描述: 16梅格× 4 × 4银行DDR SDRAM内存(1,600 × 4 × 4组,双数据速率同步动态RAM)的
文件页数: 34/69页
文件大小: 2410K
代理商: MT46V64M4
34
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
Figure 22
WRITE to PRECHARGE – Uninterrupting
t
DQSS (NOM)
CK
CK#
COMMAND
WRITE
NOP
NOP
NOP
PRE
7
NOP
ADDRESS
Bank
a
,
Col
b
Bank,
(
a
or
all
)
NOP
T0
T1
T2
T3
T2n
T4
T5
NOTE
: 1. DI
b
= data-in for column
b
.
2. Three subsequent elements of data-in are applied in the programmed order following DI
b
.
3. An uninterrupted burst of 4 is shown.
4.tWR is referenced from the first positive CK edge after the last data-in pair.
5. The PRECHARGE and WRITE commands are to the same bank. However, the PRECHARGE and WRITE commands may
be to different devices, in which case tWR is not required and the PRECHARGE command could be applied earlier.
6. A10 is LOW with the WRITE command (auto precharge is disabled).
7. PRE = PRECHARGE command.
T1n
T6
t
WR
t
RP
DQ
DQS
DM
DI
b
t
DQSS (MIN)
DQ
DQS
DM
DI
b
t
DQSS (MAX)
DQ
DQS
DM
DI
b
DON
T CARE
TRANSITIONING DATA
t
DQSS
t
DQSS
t
DQSS
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MT46V64M4_1 制造商:MICRON 制造商全称:Micron Technology 功能描述:Double Data Rate (DDR) SDRAM