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参数资料
型号： MT46V64M4
厂商： Micron Technology, Inc.
英文描述： 16 Meg x 4 x 4 banks DDR SDRAM(16M x 4 x 4组,双数据速率同步动态RAM)
中文描述： 16梅格× 4 × 4银行DDR SDRAM内存（1,600 × 4 × 4组，双数据速率同步动态RAM）的
文件页数： 3/69页
文件大小： 2410K
代理商： MT46V64M4
3
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
TABLE OF CONTENTS
Functional Block Diagram – 64 Meg x 4 ...............
Functional Block Diagram – 32 Meg x 8 ...............
Functional Block Diagram – 16 Meg x 16 .............
Pin Descriptions......................................................
4
5
6
7
Functional Description
.........................................
Initialization ......................................................
Register Definition .............................................
Mode Register ...............................................
Burst Length ............................................
Burst Type................................................
Read Latency ...........................................
Operating Mode ......................................
Extended Mode Register ...............................
DLL Enable/Disable .................................
9
9
9
9
9
10
11
11
12
12
Commands
............................................................
Truth Table 1 (Commands)
.......................................
Truth Table 1A (DM Operation)
.................................
Deselect ..............................................................
No Operation (NOP) ..........................................
Load Mode Register ...........................................
Active ................................................................
Read
................................................................
Write ................................................................
Precharge ...........................................................
Auto Precharge ..................................................
Burst Terminate .................................................
Auto Refresh ......................................................
Self Refresh.........................................................
13
13
13
14
14
14
14
14
14
14
14
14
15
15
Operation
..............................................................
Bank/Row Activation .......................................
Reads ................................................................
Read Burst ....................................................
Consecutive Read Bursts ..............................
Nonconsecutive Read Bursts .......................
Random Read Accesses ................................
Terminating a Read Burst ............................
Read to Write ...............................................
Read to Precharge .........................................
Writes ................................................................
Write Burst....................................................
Consecutive Write to Write .........................
Nonconsecutive Write to Write ..................
16
16
17
18
19
20
21
23
24
25
26
27
28
29
Random Writes ............................................
Write to Read – Uninterrupting ..................
Write to Read – Interrupting.......................
Write to Read – Odd, Interrupting .............
Write to Precharge – Uninterrupting ..........
Write to Precharge – Interrupting ...............
Write to Precharge – Odd, Interrupting......
Precharge ...........................................................
Power-Down .....................................................
Truth Table 2 (CKE)
.................................................
Truth Table 3 (Current State, Same Bank)
.....................
Truth Table 4 (Current State, Different Bank)
.................
30
31
32
33
34
35
36
37
37
38
39
41
Operating Conditions
Absolute Maximum Ratings ....................................
DC Electrical and Operating Conditions.....................
AC Input Operating Conditions .............................
Capacitance – x4, x8 ..............................................
I
DD
Specifications and Conditions – x4, x8...........
Capacitance – x16 ..................................................
I
DD
Specifications and Conditions - x16 ...............
AC Electrical Characteristics (Timing Table) ..........
Data Valid Window Derating ...............................
43
43
43
44
44
45
45
46
49
Voltage and Timing Waveforms
Nominal Output Drive Curves .........................
Reduced Output Drive Curves (x16 only)........
Output Timing –
t
DQSQ and
t
QH – x4, x8 .....
Output Timing –
t
DQSQ and
t
QH – x16 .........
Output Timing –
t
AC
and
t
DQSCK .................
Input Timing.....................................................
Input Voltage....................................................
Initialize and Load Mode Registers ..................
Power-Down Mode ..........................................
Auto Refresh Mode ...........................................
Self Refresh Mode .............................................
Reads
Bank Read – Without Auto Precharge........
Bank Read – With Auto Precharge..............
Writes
Bank Write – Without Auto Precharge.......
Bank Write – With Auto Precharge.............
Write – DM Operation ................................
66-pin TSOP dimensions........................................
54
55
56
57
58
58
59
60
61
62
63
64
65
66
67
68
69
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相关代理商/技术参数
参数描述
MT46V64M4_1 制造商:MICRON 制造商全称:Micron Technology 功能描述:Double Data Rate (DDR) SDRAM
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