![](http://datasheet.mmic.net.cn/390000/MT46V64M4_datasheet_16823572/MT46V64M4_44.png)
44
256Mb: x4, x8, x16 DDR SDRAM
256Mx4x8x16DDR_B.p65
–
Rev. B; Pub. 7/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
256Mb: x4, x8, x16
DDR SDRAM
ADVANCE
CAPACITANCE (x4, x8)
(Note: 13; notes appear on pages 50
–
53)
PARAMETER
Delta Input/Output Capacitance: DQs, DQS, DM
Delta Input Capacitance: Command and Address
Delta Input Capacitance: CK, CK#
Input/Output Capacitance: DQs, DQS, DM
Input Capacitance: Command and Address
Input Capacitance: CK, CK#
Input Capacitance: CKE
SYMBOL
DC
IO
DC
I
1
DC
I
2
C
IO
C
I
1
C
I
2
C
I
3
MIN
–
–
–
4.0
2.0
2.0
2.0
MAX
0.50
0.50
0.25
5.0
3.0
3.0
3.0
UNITS
pF
pF
pF
pF
pF
pF
pF
NOTES
24
29
29
AC INPUT OPERATING CONDITIONS
(Notes: 1
–
5, 14, 16; notes appear on pages 50
–
53) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V)
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Clock Input Differential Voltage; CK and CK#
Clock Input Crossing Point Voltage; CK and CK#
I/O Reference Voltage
SYMBOL
V
IH
(
AC
)
V
IL
(
AC
)
V
ID
(
AC
)
V
IX
(
AC
)
V
REF
(
AC
)
MIN
MAX
–
UNITS
V
V
V
V
V
NOTES
14, 28, 40
14, 28, 40
8
9
6
V
REF
+ 0.310
–
0.7
0.5 x V
DD
Q - 0.2 0.5 x V
DD
Q + 0.2
0.49 x V
DD
Q
V
REF
- 0.310
V
DD
Q + 0.6
0.51 x V
DD
Q