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参数资料
| 型号： | NAND01GW3B2AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 |
| 文件页数： | 26/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GW3B2AN6F |
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Device operations
NAND01G-B, NAND02G-B
32/64
6.6
Block Erase
Erase operations are done one block at a time. An erase operation sets all of the bits in the
addressed block to ‘1’. All previous data in the block is lost.
An erase operation consists of three steps (refer to Figure 15):
1.
One bus cycle is required to setup the Block Erase command. Only addresses A18-
A28 (x8) or A17-A27 (x16) are used, the other address inputs are ignored.
2.
two or three bus cycles are then required to load the address of the block to be erased.
3.
one bus cycle is required to issue the Block Erase confirm command to start the P/E/R
Controller.
The operation is initiated on the rising edge of write Enable, W, after the confirm command
is issued. The P/E/R Controller handles Block Erase and implements the verify process.
During the Block Erase operation, only the Read Status Register and Reset commands will
be accepted, all other commands will be ignored.
Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the
Ready/Busy signal goes High. If the operation completed successfully, the Write Status Bit
SR0 is ‘0’, otherwise it is set to ‘1’.
Figure 15.
Block Erase Operation
6.7
Reset
The Reset command is used to reset the Command Interface and Status Register. If the
Reset command is issued during any operation, the operation will be aborted. If it was a
program or erase operation that was aborted, the contents of the memory locations being
modified will no longer be valid as the data will be partially programmed or erased.
If the device has already been reset then the new Reset command will not be accepted.
The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value
of tBLBH4 depends on the operation that the device was performing when the command was
issued, refer to Table 25: AC Characteristics for Operations for the values.
I/O
RB
Block Address
Inputs
SR0
ai07593
D0h
70h
60h
Block Erase
Setup Code
Confirm
Code
Read Status Register
Busy
tBLBH3
(Erase Busy time)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2AN6T | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6E | 功能描述:闪存 NAND MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 25US 63VFBGA - Tape and Reel |
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