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参数资料
| 型号： | NAND01GW3B2AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 |
| 文件页数： | 63/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GW3B2AN6F |
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Summary description
NAND01G-B, NAND02G-B
8/64
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Summary description
The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories
that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with
either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64
spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16
bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of
NAND Flash devices it is strongly recommended to implement an Error Correction Code
(ECC).
The devices have hardware and software security features:
●
A Write Protect pin is available to give a hardware protection against program and
erase operations.
●
A Block Locking scheme is available to provide user code and/or data protection.
The devices feature an open-drain Ready/Busy output that can be used to identify if the
Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output
allows the Ready/Busy pins from several memories to be connected to a single pull-up
resistor.
A Copy Back Program command is available to optimize the management of defective
blocks. When a Page Program operation fails, the data can be programmed in another page
without having to resend the data to be programmed.
Each device has Cache Program and Cache Read features which improve the program and
read throughputs for large files. During Cache Programming, the device loads the data in a
Cache Register while the previous data is transferred to the Page Buffer and programmed
into the memory array. During Cache Reading, the device loads the data in a Cache
Register while the previous data is transferred to the I/O Buffers to be read.
All devices have the Chip Enable Don’t Care feature, which allows code to be directly
downloaded by a microcontroller, as Chip Enable transitions during the latency time do not
stop the read operation.
All devices have the option of a Unique Identifier (serial number), which allows each device
to be uniquely identified.
The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not
described in the datasheet. For more details of this option contact your nearest ST Sales
office.
The devices are available in the following packages:
●
TSOP48 (12 x 20mm) for all products
●
VFBGA63 (9.5 x 12 x 1mm, 0.8mm pitch) for 1Gb products
●
TFBGA63 (9.5 x 12 x 1.2mm, 0.8mm pitch) for 2Gb Dual Die products
In order to meet environmental requirements, ST offers the NAND01G-B and NAND02G-B
in ECOPACK packages. ECOPACK packages are Lead-free. The category of second Level
Interconnect is marked on the package and on the inner box label, in compliance with
相关PDF资料 |
PDF描述 |
|---|---|
| NAND08GW3B2CZC1 | 1G X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GR3B3CZA1 | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND02GR4B2BZB1 | 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NCH030A3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
| NTHA3JAA3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2AN6T | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6E | 功能描述:闪存 NAND MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 25US 63VFBGA - Tape and Reel |
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