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参数资料
| 型号： | NAND01GW3B2AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 |
| 文件页数： | 30/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GW3B2AN6F |
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Data protection
NAND01G-B, NAND02G-B
36/64
7
Data protection
The device has both hardware and software features to protect against program and erase
operations.
It features a Write Protect, WP, pin, which can be used to protect the device against program
and erase operations. It is recommended to keep WP at VIL during power-up and power-
down.
In addition, to protect the memory from any involuntary program/erase operations during
power-transitions, the device has an internal voltage detector which disables all functions
The device features a Block Lock mode, which is enabled by setting the Power-Up Read
Enable, Lock/Unlock Enable, PRL, signal to High.
The Block Lock mode has two levels of software protection.
●
Blocks Lock/Unlock
●
Blocks Lock-down
Refer to Figure 18 for an overview of the protection mechanism.
7.1
Blocks Lock
All the blocks are locked simultaneously by issuing a Blocks Lock command (see Table 10:
All blocks are locked after power-up and when the Write Protect signal is Low.
Once all the blocks are locked, one sequence of consecutive blocks can be unlocked by
using the Blocks Unlock command.
Refer to Figure 23: Command Latch AC Waveforms for details on how to issue the
command.
7.2
Blocks Unlock
A sequence of consecutive locked blocks can be unlocked, to allow program or erase
operations, by issuing an Blocks Unlock command (see Table 10: Commands).
The Blocks Unlock command consists of four steps:
1.
One bus cycle to setup the command
2.
two or three bus cycles to give the Start Block Address (refer to Table 8, Table 9 and
3.
one bus cycle to confirm the command
4.
two or three bus cycles to give the End Block Address (refer to Table 8, Table 9 and
The Start Block Address must be nearer the logical LSB (Least Significant Bit) than End
Block Address.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2AN6T | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6E | 功能描述:闪存 NAND MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 25US 63VFBGA - Tape and Reel |
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