- 您现在的位置：买卖IC网 > PDF目录268181 > NAND01GW3B2AN6F (NUMONYX) 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 PDF资料下载
参数资料
| 型号： | NAND01GW3B2AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 |
| 文件页数： | 9/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GW3B2AN6F |
第1页第2页第3页第4页第5页第6页第7页第8页当前第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页
NAND01G-B, NAND02G-B
Signal descriptions
17/64
3
Signal descriptions
See Figure 2: Logic Diagram, and Table 3: Signal Names, for a brief overview of the signals
connected to this device.
3.1
Inputs/Outputs (I/O0-I/O7)
Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read
operation or input a command or data during a Write operation. The inputs are latched on
the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or
the outputs are disabled.
3.2
Inputs/Outputs (I/O8-I/O15)
Input/Outputs 8 to 15 are only available in x16 devices. They are used to output the data
during a Read operation or input data during a Write operation. Command and Address
Inputs only require I/O0 to I/O7.
The inputs are latched on the rising edge of Write Enable. I/O8-I/O15 are left floating when
the device is deselected or the outputs are disabled.
3.3
Address Latch Enable (AL)
The Address Latch Enable activates the latching of the Address inputs in the Command
Interface. When AL is high, the inputs are latched on the rising edge of Write Enable.
3.4
Command Latch Enable (CL)
The Command Latch Enable activates the latching of the Command inputs in the Command
Interface. When CL is high, the inputs are latched on the rising edge of Write Enable.
3.5
Chip Enable (E)
The Chip Enable input activates the memory control logic, input buffers, decoders and
sense amplifiers. When Chip Enable is low, VIL, the device is selected. If Chip Enable goes
high, vIH, while the device is busy, the device remains selected and does not go into standby
mode.
3.6
Read Enable (R)
The Read Enable pin, R, controls the sequential data output during Read operations. Data
is valid tRLQV after the falling edge of R. The falling edge of R also increments the internal
column address counter by one.
相关PDF资料 |
PDF描述 |
|---|---|
| NAND08GW3B2CZC1 | 1G X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GR3B3CZA1 | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND02GR4B2BZB1 | 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NCH030A3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
| NTHA3JAA3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2AN6T | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6E | 功能描述:闪存 NAND MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 25US 63VFBGA - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。