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参数资料
| 型号： | NAND01GW3B2AN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 |
| 文件页数： | 37/64页 |
| 文件大小： | 632K |
| 代理商： | NAND01GW3B2AN6F |
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Software algorithms
NAND01G-B, NAND02G-B
42/64
8.3
Garbage Collection
When a data page needs to be modified, it is faster to write to the first available page, and
the previous page is marked as invalid. After several updates it is necessary to remove
invalid pages to free some memory space.
To free this memory space and allow further program operations it is recommended to
implement a Garbage Collection algorithm. In a Garbage Collection software the valid
pages are copied into a free area and the block containing the invalid pages is erased (see
8.4
Wear-leveling algorithm
For write-intensive applications, it is recommended to implement a Wear-leveling Algorithm
to monitor and spread the number of write cycles per block.
In memories that do not use a Wear-Leveling Algorithm not all blocks get used at the same
rate. Blocks with long-lived data do not endure as many write cycles as the blocks with
frequently-changed data.
The Wear-leveling Algorithm ensures that equal use is made of all the available write cycles
for each block. There are two wear-leveling levels:
●
First Level Wear-leveling, new data is programmed to the free blocks that have had the
fewest write cycles
●
Second Level Wear-leveling, long-lived data is copied to another block so that the
original block can be used for more frequently-changed data.
The Second Level Wear-leveling is triggered when the difference between the maximum
and the minimum number of write cycles per block reaches a specific threshold.
8.5
Error Correction Code
An Error Correction Code (ECC) can be implemented in the NAND Flash memories to
identify and correct errors in the data.
For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for
line parity plus 6 bits for column parity).
An ECC model is available in VHDL or Verilog. Contact the nearest ST Microelectronics
sales office for more details.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GW3B2AN6T | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GW3B2AZA6E | 功能描述:闪存 NAND MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GW3B2AZA6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3.3V 1GBIT 128MX8 25US 63VFBGA - Tape and Reel |
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