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| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 20/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
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January 25, 2005 S29WS-N_00_G0
25
Ad vance
Information
Table 7.8. Configuration Register
Reading the Configuration Table. The configuration register can be read with a four-cycle com-
mand sequence. See Table 12.1 for sequence details. Once the data has been read from the
configuration register, a software reset command is required to set the device into the correct
state.
7.4
Autoselect
The Autoselect is used for manufacturer ID, Device identification, and sector protection informa-
tion. This mode is primarily intended for programming equipment to automatically match a device
with its corresponding programming algorithm. The Autoselect codes can also be accessed in-sys-
tem. When verifying sector protection, the sector address must appear on the appropriate highest
order address bits (see Table 7.9). The remaining address bits are don't care. The most significant
four bits of the address during the third write cycle selects the bank from which the Autoselect
codes are read by the host. All other banks can be accessed normally for data read without exiting
the Autoselect mode.
To access the Autoselect codes, the host system must issue the Autoselect command.
CR Bit
Function
Settings (Binary)
CR15
Set Device Read
Mode
0 = Synchronous Read (Burst Mode) Enabled
1 = Asynchronous Read Mode (default) Enabled
CR14
Boundary Crossing
54 MHz
66 Mhz
80 MHz
S29WS064N
S29WS128N
N/A
Default value is "0"
S29WS256N
0
1
0 = No extra boundary crossing latency
1 = With extra boundary crossing latency (default)
Must be set to “1” greater than 54 MHz.
CR13
Programmable
Wait State
S29WS064N
S29WS128N
01
1
011 = Data valid on 5th active CLK edge after addresses
latched
100 = Data valid on 6th active CLK edge after addresses
latched
101 = Data valid on 7th active CLK edge after addresses
latched (default)
110 = Reserved
111 = Reserved
Inserts wait states before initial data is available. Setting
greater number of wait states before initial data reduces
latency after initial data.
(Notes 1, 2)
S29WS256N
CR12
S29WS064N
S29WS128N
10
0
S29WS256N
CR11
S29WS064N
S29WS128N
10
1
S29WS256N
CR10
RDY Polarity
0 = RDY signal active low
1 = RDY signal active high (default)
CR9
Reserved
1 = default
CR8
RDY
0 = RDY active one clock cycle before data
1 = RDY active with data (default)
When CR13-CR11 are set to 000, RDY is active with data
regardless of CR8 setting.
CR7
Reserved
1 = default
CR6
Reserved
1 = default
CR5
Reserved
0 = default
CR4
Reserved
0 = default
CR3
Burst Wrap Around
0 = No Wrap Around Burst
1 = Wrap Around Burst (default)
CR2
CR1
CR0
Burst Length
000 = Continuous (default)
010 = 8-Word Linear Burst
011 = 16-Word Linear Burst
100 = 32-Word Linear Burst
(All other bit settings are reserved)
Notes:
2. Refer to Synchronous Burst Read timing diagrams
3. Configuration Register is in the default state upon power-up or hardware reset.
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相关代理商/技术参数 |
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| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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