- 您现在的位置：买卖IC网 > PDF目录225141 > S29WS064N0PBAW011 (Spansion Inc.) 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY PDF资料下载
参数资料
| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 36/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页当前第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页第97页第98页第99页
January 25, 2005 S29WS-N_00_G0
39
Ad vance
Information
After the programming operation has been suspended, the system can read array data from any
non-suspended sector. The Program Suspend command may also be issued during a program-
ming operation while an erase is suspended. In this case, data may be read from any addresses
not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector
area, then user must use the proper command sequences to enter and exit this region.
The system may also write the Autoselect command sequence when the device is in Program Sus-
pend mode. The device allows reading Autoselect codes in the suspended sectors, since the codes
are not stored in the memory array. When the device exits the Autoselect mode, the device re-
verts to Program Suspend mode, and is ready for another valid operation. See “Autoselect
Command Sequence” for more information.
After the Program Resume command is written, the device reverts to programming. The system
can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See “Write Operation Status” for more information.
The system must write the Program Resume command (address bits are “don't care”) to exit the
Program Suspend mode and continue the programming operation. Further writes of the Program
Resume command are ignored. Another Program Suspend command can be written after the de-
vice has resumed programming.
The following is a C source code example of using the program suspend function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program suspend command */
*( (UINT16 *)base_addr + 0x000 ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the program resume function. Refer to the
Spansion Low Level Driver User’s Guide (available on www.amd.com and www.fujitsu.com)
for general information on Spansion Flash memory software development guidelines.
/* Example: Program resume command */
*( (UINT16 *)base_addr + 0x000 ) = 0x0030;
/* write resume command
*/
7.5.7 Accelerated Program/Chip Erase
Accelerated single word programming, write buffer programming, sector erase, and chip erase
operations are enabled through the ACC function. This method is faster than the standard chip
program and erase command sequences.
The accelerated chip program and erase functions must not be used more than 10 times
per sector. In addition, accelerated chip program and erase should be performed at room tem-
perature (25
°C ±10°C).
Software Functions and Sample Code
Table 7.18. Program Suspend
(LLD Function = lld_ProgramSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
00B0h
Table 7.19. Program Resume
(LLD Function = lld_ProgramResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Bank Address
0030h
相关PDF资料 |
PDF描述 |
|---|---|
| S29WS128N0LBFI111 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFI112 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFI113 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS128N0LBFW011 | Test Clip; Current Rating:100A; Body Material:Steel; Features:Unmarked; Jaw Opening Max:1.625"; Overall Length:6" RoHS Compliant: NA |
| S29WS128N0LBFI011 | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
发布紧急采购，3分钟左右您将得到回复。