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参数资料
| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 21/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
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26
S29WS-N_00_G0 January 25, 2005
Adva nce
Information
The Autoselect command sequence may be written to an address within a bank that is
either in the read or erase-suspend-read mode.
The Autoselect command may not be written while the device is actively programming or
erasing. Autoselect does not support simultaneous operations or burst mode.
The system must write the reset command to return to the read mode (or erase-suspend-
read mode if the bank was previously in Erase Suspend).
See Table 12.1 for command sequence details.
Table 7.9. Autoselect Addresses
Notes:
1. Any offset within the device works.
2. BA = Bank Address. The bank address is required.
3. base = base address.
Description
Address
Read Data
Manufacturer ID
(BA) + 00h
0001h
Device ID, Word 1
(BA) + 01h
227Eh
Device ID, Word 2
(BA) + 0Eh
2230 (WS256N)
2231 (WS128N)
2232 (WS064N)
Device ID, Word 3
(BA) + 0Fh
2200
Indicator Bits
(BA) + 03h
DQ15 - DQ8 = Reserved
DQ7 (Factory Lock Bit): 1 = Locked, 0 = Not Locked
DQ6 (Customer Lock Bit): 1 = Locked, 0 = Not Locked
DQ5 (Handshake Bit): 1 = Reserved, 0 = Standard Handshake
DQ4, DQ3 (WP# Protection Boot Code): 00 = WP# Protects both Top Boot and
Bottom Boot Sectors. 01, 10, 11 = Reserved
DQ2 = Reserved
DQ1 (DYB Power up State [Lock Register DQ4]): 1 = Unlocked (user option),
0 = Locked (default)
DQ0 (PPB Eraseability [Lock Register DQ3]): 1 = Erase allowed,
0 = Erase disabled
Sector Block Lock/
Unlock
(SA) + 02h
0001h = Locked, 0000h = Unlocked
Note: For WS128N and WS064, DQ1 and DQ0 are reserved.
Software Functions and Sample Code
Table 7.10. Autoselect Entry
(LLD Function = lld_AutoselectEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
BAxAAAh
BAx555h
0x00AAh
Unlock Cycle 2
Write
BAx555h
BAx2AAh
0x0055h
Autoselect Command
Write
BAxAAAh
BAx555h
0x0090h
Table 7.11. Autoselect Exit
(LLD Function = lld_AutoselectExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
base + XXXh
0x00F0h
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相关代理商/技术参数 |
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| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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