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参数资料
| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 23/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
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Publication Number S29WS-N_00
Revision G Amendment 0 Issue Date January 25, 2005
General Description
The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate
banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of
1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better per-
formance and lowered power consumption.
Distinctive Characteristics
Single 1.8 V read/program/erase (1.70–1.95 V)
110 nm MirrorBit Technology
Simultaneous Read/Write operation with zero
latency
32-word Write Buffer
Sixteen-bank architecture consisting of 16/8/4
Mwords for WS256N/128N/064N, respectively
Four 16 Kword sectors at both top and bottom of
memory array
254/126/62 64 Kword sectors (WS256N/128N/
064N)
Programmable burst read modes
— Linear for 32, 16 or 8 words linear read with or
without wrap-around
— Continuous sequential read mode
SecSi (Secured Silicon) Sector region consisting
of 128 words each for factory and customer
20-year data retention (typical)
Cycling Endurance: 100,000 cycles per sector
(typical)
RDY output indicates data available to system
Command set compatible with JEDEC (42.4)
standard
Hardware (WP#) protection of top and bottom
sectors
Dual boot sector configuration (top and bottom)
Offered Packages
— WS064N: 80-ball FBGA (7 mm x 9 mm)
— WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
Low VCC write inhibit
Persistent and Password methods of Advanced
Sector Protection
Write operation status bits indicate program and
erase operation completion
Suspend and Resume commands for Program and
Erase operations
Unlock Bypass program command to reduce
programming time
Synchronous or Asynchronous program operation,
independent of burst control register settings
ACC input pin to reduce factory programming time
Support for Common Flash Interface (CFI)
Industrial Temperature range (contact factory)
Performance Characteristics
S29WS-N MirrorBit Flash Family
S29WS256N, S29WS128N, S29WS064N
256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only
Simultaneous Read/Write, Burst Mode Flash Memory
Data Sheet
ADVANCE
INFORMATION
Read Access Times
Speed Option (MHz)
80
66
54
Max. Synch. Latency, ns (tIACC)80
80
Max. Synch. Burst Access, ns (tBACC)
9
11.2
13.5
Max. Asynch. Access Time, ns (tACC)80
80
Max CE# Access Time, ns (tCE)80
80
Max OE# Access Time, ns (tOE)
13.5
Current Consumption (typical values)
Continuous Burst Read @ 66 MHz
35 mA
Simultaneous Operation (asynchronous)
50 mA
Program (asynchronous)
19 mA
Erase (asynchronous)
19 mA
Standby Mode (asynchronous)
20 A
Typical Program & Erase Times
Single Word Programming
40 s
Effective Write Buffer Programming (VCC) Per Word
9.4 s
Effective Write Buffer Programming (VACC) Per Word
6 s
Sector Erase (16 Kword Sector)
150 ms
Sector Erase (64 Kword Sector)
600 ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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