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参数资料
| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 43/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
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46
S29WS-N_00_G0 January 25, 2005
Adva nce
Information
then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands
(except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device
accepts additional sector erase commands. To ensure the command has been accepted, the sys-
tem software should check the status of DQ3 prior to and following each sub-sequent sector erase
command. If DQ3 is high on the second status check, the last command might not have been
accepted. Table 7.24 shows the status of DQ3 relative to the other status bits.
DQ1: Write to Buffer Abort.
DQ1 indicates whether a Write to Buffer operation was aborted.
Under these conditions DQ1 produces a “1”. The system must issue the Write to Buffer Abort
Reset command sequence to return the device to reading array data. See Write Buffer Program-
ming Operation for more details.
Table 7.24. Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the
section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
3. Data are invalid for addresses in a Program Suspended sector.
4. DQ1 indicates the Write to Buffer ABORT status during Write Buffer Programming operations.
5. The data-bar polling algorithm should be used for Write Buffer Programming operations. Note that DQ7# during Write Buffer Programming
indicates the data-bar for DQ7 data for the LAST LOADED WRITE-BUFFER ADDRESS location.
Status
DQ7
DQ6
DQ5
DQ3
DQ2
DQ1
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
Program
Suspend
Mode
Reading within Program Suspended Sector
INVALID
(Not
Allowed)
INVALID
(Not
Allowed)
INVALID
(Not
Allowed)
INVALID
(Not
Allowed)
INVALID
(Not
Allowed)
INVALID
(Not
Allowed)
Reading within Non-Program Suspended
Sector
Data
Erase
Suspend
Mode
Erase-Suspend-
Read
Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
N/A
Non-Erase Suspended
Sector
Data
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
Write to
Buffer
BUSY State
DQ7#
Toggle
0
N/A
0
Exceeded Timing Limits
DQ7#
Toggle
1
N/A
0
ABORT State
DQ7#
Toggle
0
N/A
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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