参数资料
型号: S29WS064N0PBAW011
厂商: Spansion Inc.
英文描述: 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY
中文描述: 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存
文件页数: 72/99页
文件大小: 1091K
代理商: S29WS064N0PBAW011
72
S29WS-N_00_G0 January 25, 2005
Adva nce
Information
Notes:
1. Figure assumes 6 wait states for initial access and synchronous read.
2. The Set Configuration Register command sequence has been written with CR8=0; device outputs RDY one
cycle before valid data.
Figure 11.10. Linear Burst with RDY Set One Cycle Before Data
11.8.4 AC Characteristics—Asynchronous Read
Notes:
1. Not 100% tested.
2. The content in this document is Advance information for the S29WS064N and
S29WS128N. Content in this document is Preliminary for the S29W256N.
Parameter
Description
54 MHz
66 MHz
80
MHz
Unit
JEDEC
Standard
tCE
Access Time from CE# Low
Max
80
ns
tACC
Asynchronous Access Time
Max
80
ns
tAVDP
AVD# Low Time
Min
8
ns
tAAVDS
Address Setup Time to Rising Edge of AVD#
Min
4
ns
tAAVDH
Address Hold Time from Rising Edge of AVD#
Min
7
6
ns
tOE
Output Enable to Output Valid
Max
13.5
ns
tOEH
Output Enable Hold Time
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
tOEZ
Output Enable to High Z (see Note)
Max
10
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
Da+1
Da
Da+2
Da+3
Da + n
OE#
Data
Addresses
Aa
AVD#
RDY
CLK
CE#
tCES
tACS
tAVC
tAVD
tACH
tOE
tRACC
tOEZ
tCEZ
tIACC
tAOE
tBDH
6 wait cycles for initial access shown.
Hi-Z
12
3
4
5
6
tRDYS
tBACC
tCR
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