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| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 58/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
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January 25, 2005 S29WS-N_00_G0
59
Ad vance
Information
9
Power Conservation Modes
9.1
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby
mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the
high impedance state, independent of the OE# input. The device enters the CMOS standby mode
when the CE# and RESET# inputs are both held at VCC ± 0.2 V. The device requires standard
access time (tCE) for read access, before it is ready to read data. If the device is deselected during
erasure or programming, the device draws active current until the operation is completed. ICC3 in
“DC Characteristics” represents the standby current specification
9.2
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption while in asynchronous
mode. the device automatically enables this mode when addresses remain stable for tACC + 20
ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Stan-
dard address access timings provide new data when addresses are changed. While in sleep mode,
output data is latched and always available to the system. While in synchronous mode, the auto-
matic sleep mode is disabled. Note that a new burst operation is required to provide new data.
ICC6 in “DC Characteristics” represents the automatic sleep mode current specification.
9.3
Hardware RESET# Input Operation
The RESET# input provides a hardware method of resetting the device to reading array data.
When RESET# is driven low for at least a period of tRP, the device immediately terminates any
operation in progress, tristates all outputs, resets the configuration register, and ignores all read/
write commands for the duration of the RESET# pulse. The device also resets the internal state
machine to reading array data. The operation that was interrupted should be reinitiated once the
device is ready to accept another command sequence to ensure data integrity.
When RESET# is held at VSS ± 0.2 V, the device draws CMOS standby current (ICC4). If RESET#
is held at VIL but not within VSS ± 0.2 V, the standby current is greater.
RESET# may be tied to the system reset circuitry and thus, a system reset would also reset the
Flash memory, enabling the system to read the boot-up firmware from the Flash memory.
9.4
Output Disable (OE#)
When the OE# input is at VIH, output from the device is disabled. The outputs are placed in the
high impedance state.
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相关代理商/技术参数 |
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| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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