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| 型号： | S29WS064N0PBAW011 |
| 厂商： | Spansion Inc. |
| 英文描述： | 256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| 中文描述： | 256/128/64兆位的CMOS 1.8伏只有同时读/写突发模式闪存 |
| 文件页数： | 75/99页 |
| 文件大小： | 1091K |
| 代理商： | S29WS064N0PBAW011 |
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January 25, 2005 S29WS-N_00_G0
75
Ad vance
Information
11.8.6 Erase/Program Timing
Notes:
1. Not 100% tested.
2. Asynchronous read mode allows Asynchronous program operation only. Synchronous read mode allows both Asynchronous and
Synchronous program operation.
3. In asynchronous program operation timing, addresses are latched on the falling edge of WE#. In synchronous program operation timing,
addresses are latched on the rising edge of CLK.
4. See the “Erase and Programming Performance” section for more information.
5. Does not include the preprogramming time.
6. The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document is Preliminary for the
S29W256N.
Parameter
Description
54 MHz
66 MHz
80 MHz
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 1)
Min
80
ns
tAVWL
tAS
Address Setup Time (Notes 2, 3)
Synchronous
Min
5ns
Asynchronous
0
ns
tWLAX
tAH
Address Hold Time (Notes 2, 3)
Synchronous
Min
9
ns
Asynchronous
20
tAVDP
AVD# Low Time
Min
8
ns
tDVWH
tDS
Data Setup Time
Min
45
20
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
Read Recovery Time Before Write
Min
0
ns
tCAS
CE# Setup Time to AVD#
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
30
ns
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tVID
VACC Rise and Fall Time
Min
500
ns
tVIDS
VACC Setup Time (During Accelerated Programming)
Min
1
s
tVCS
VCC Setup Time
Min
50
s
tELWL
tCS
CE# Setup Time to WE#
Min
5
ns
tAVSW
AVD# Setup Time to WE#
Min
5
ns
tAVHW
AVD# Hold Time to WE#
Min
5
ns
tAVSC
AVD# Setup Time to CLK
Min
5
ns
tAVHC
AVD# Hold Time to CLK
Min
5
ns
tCSW
Clock Setup Time to WE#
Min
5
ns
tWEP
Noise Pulse Margin on WE#
Max
3
ns
tSEA
Sector Erase Accept Time-out
Max
50
s
tESL
Erase Suspend Latency
Max
20
s
tPSL
Program Suspend Latency
Max
20
s
tASP
Toggle Time During Sector Protection
Typ
100
s
tPSP
Toggle Time During Programming Within a Protected Sector
Typ
1
s
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| S29WS064N0PBAW012 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 Megabit (16/8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| S29WS064N0PBAW013 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW110 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW111 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
| S29WS064N0PBAW112 | 制造商:SPANSION 制造商全称:SPANSION 功能描述:256/128/64 MEGABIT CMOS 1.8 VOLT ONLY SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY |
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