参数资料
型号: SPC5634MF1MMG80
厂商: Freescale Semiconductor
文件页数: 118/122页
文件大小: 0K
描述: IC MCU FLASH 1.5M 94K 208-PBGA
标准包装: 90
系列: MPC56xx Qorivva
核心处理器: e200z3
芯体尺寸: 32-位
速度: 80MHz
连通性: CAN,EBI/EMI,LIN,SCI,SPI,UART/USART
外围设备: DMA,POR,PWM,WDT
输入/输出数: 114
程序存储器容量: 1.5MB(1.5M x 8)
程序存储器类型: 闪存
RAM 容量: 94K x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.25 V
数据转换器: A/D 34x12b
振荡器型: 内部
工作温度: -40°C ~ 150°C
封装/外壳: 208-BGA
包装: 托盘
Electrical characteristics
MPC5634M Microcontroller Data Sheet, Rev. 9
Freescale Semiconductor
95
4.16.3
Calibration bus interface timing
Table 38. Calibration bus operation timing 1
1 Calibration bus timing specified at fSYS = 80 MHz, VDD = 1.14 V to 1.32 V, VDDE = 1.62 V to 3.6 V (unless stated
otherwise), TA = TL to TH, and CL = 30 pF with DSC = 0b10.
#
Symbol
C
Characteristic
66 MHz (ext. bus)2
2 The external bus is limited to half the speed of the internal bus. The maximum external bus frequency is 66 MHz.
Unit
Notes
Min
Max
1TC
CC
P CLKOUT Period
15.2
ns
Signals are
measured at 50%
VDDE.
2tCDC CC D CLKOUT duty cycle
45%
55%
TC
3tCRT CC D CLKOUT rise time
3
3 Refer to Fast Pad timing in Table 34 and Table 35 (different values for 3.3 V vs. 1.8 V).
ns
4tCFT CC D CLKOUT fall time
ns
5tCOH CC D CLKOUT Posedge to Output Signal
Invalid or High Z(Hold Time)
ADDR[8:31]
CS[0:3]
DATA[0:31]
OE
RD_WR
TS
WE[0:3]/BE[0:3]
1.04/1.5
4 The EBTS=0 timings are only valid/ tested at VDDE=2.25–3.6 V, whereas EBTS=1 timings are valid/tested at
1.6–3.6 V.
ns
Hold time selectable
via
SIU_ECCR[EBTS]
bit:
EBTS=0: 1.0ns
EBTS=1: 1.5ns
6tCOV CC D CLKOUT Posedge to Output Signal Valid
(Output Delay)
ADDR[8:31]
CS[0:3]
DATA[0:31]
OE
RD_WR
TS
WE[0:3]/BE[0:3]
—6.04/7.0
ns
Output valid time
selectable via
SIU_ECCR[EBTS]
bit:
EBTS=0: 5.5ns
EBTS=1: 6.5ns
7tCIS
CC
D Input Signal Valid to CLKOUT Posedge
(Setup Time)
DATA[0:31]
5.0
ns
8tCIH
CC
D CLKOUT Posedge to Input Signal Invalid
(Hold Time)
DATA[0:31]
1.0
ns
9tAPW CC D ALE Pulse Width5
5 Measured at 50% of ALE.
6.5
ns
10
tAAI
CC
D ALE Negated to Address Invalid5
3—
ns
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