参数资料
型号: SPC5634MF1MMG80
厂商: Freescale Semiconductor
文件页数: 78/122页
文件大小: 0K
描述: IC MCU FLASH 1.5M 94K 208-PBGA
标准包装: 90
系列: MPC56xx Qorivva
核心处理器: e200z3
芯体尺寸: 32-位
速度: 80MHz
连通性: CAN,EBI/EMI,LIN,SCI,SPI,UART/USART
外围设备: DMA,POR,PWM,WDT
输入/输出数: 114
程序存储器容量: 1.5MB(1.5M x 8)
程序存储器类型: 闪存
RAM 容量: 94K x 8
电压 - 电源 (Vcc/Vdd): 4.5 V ~ 5.25 V
数据转换器: A/D 34x12b
振荡器型: 内部
工作温度: -40°C ~ 150°C
封装/外壳: 208-BGA
包装: 托盘
Electrical characteristics
MPC5634M Microcontroller Data Sheet, Rev. 9
Freescale Semiconductor
59
Table 9. Thermal characteristics for 176-pin LQFP1
1 Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Symbol
C
Parameter
Conditions
Value
Unit
RJA
CC
D Junction-to-Ambient, Natural Convection2
2 Junction-to-Ambient Thermal Resistance determined per JEDEC JESD51-3 and JESD51-6. Thermal test board
meets JEDEC specification for this package.
Single layer board - 1s
38
°C/W
RJA
CC
D Junction-to-Ambient, Natural Convection2
Four layer board - 2s2p
31
°C/W
RJMA
CC
D Junction-to-Moving-Air, Ambient2
@200 ft./min., single layer
board - 1s
30
°C/W
RJMA
CC
D Junction-to-Moving-Air, Ambient2
@200 ft./min., four layer
board - 2s2p
25
°C/W
RJB
CC
D Junction-to-Board3
3 Junction-to-Board thermal resistance determined per JEDEC JESD51-8. Thermal test board meets JEDEC
specification for the specified package.
20
°C/W
RJCtop
CC
D Junction-to-Case4
4 Junction-to-Case at the top of the package determined using MIL-STD 883 Method 1012.1. The cold plate
temperature is used for the case temperature. Reported value includes the thermal resistance of the interface layer.
5°C/W
JT
CC
D Junction-to-Package Top, Natural
Convection5
5 Thermal characterization parameter indicating the temperature difference between the package top and the
junction temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization
parameter is written as Psi-JT.
2°C/W
Table 10. Thermal characteristics for 208-pin MAPBGA1
1 Thermal characteristics are targets based on simulation that are subject to change per device characterization.
Symbol
C
Parameter
Conditions
Value
Unit
RJA
CC
D Junction-to-ambient, natural convection2,3
2 Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site
(board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board
thermal resistance.
3 Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal.
One layer board - 1s
39
°C/W
RJMA
CC
D Junction-to-ambient natural convection2,4
4 Per JEDEC JESD51-6 with the board horizontal.
Four layer board - 2s2p
24
°C/W
RJA
CC
D Junction-to-ambient (@200 ft/min)2,4
Single layer board
31
°C/W
RJMA
CC
D Junction-to-ambient (@200 ft/min)2,4
Four layer board 2s2p
20
°C/W
RJB
CC
D Junction-to-board5
5
Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is
measured on the top surface of the board near the package.
Four layer board - 2s2p
13
°C/W
RJC
CC
D Junction-to-case6
6 Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate
method (MIL SPEC-883 Method 1012.1) with the cold plate temperature used for the case temperature.
6°C/W
JT
CC
D Junction-to-package top natural convection7
2°C/W
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