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参数资料
型号： BDX33BBU
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 10 A, 80 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 23/61页
文件大小： 360K
代理商： BDX33BBU
BDX33B BDX33C BDX34B BDX34C
3–219
Motorola Bipolar Power Transistor Device Data
Figure 1. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t)
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(t) = r(t) RθJC
R
θJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
SINGLE
PULSE
0.03
0.3
3.0
30
300
20
1.0
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
dc
5.0 ms
1.0 ms
BDX33B
BDX33C
500
s
100
s
TC = 25°C
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
20
1.0
Figure 2. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
5.0
2.0
1.0
0.5
0.02
3.0
5.0
7.0
10
20
30
50
100
70
0.2
I C
,C
OLLE
CT
OR
C
URREN
T
(AMP
)
dc
5.0 ms
1.0 ms
BDX34B
BDX34C
500
s
100
s
TC = 25°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
0.05
0.1
2.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(AMP)
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Fig. 3 is based on
TJ(pk) = 150_C; TC is variable depending on conditions. Se-
cond breakdown pulse limits are valid for duty cycles to 10%
provided TJ(pk) = 150_C. TJ(pk) may be calculated from the
data in Fig. . At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
10,000
1.0
Figure 3. Small–Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0
10
20
50
100
200
1000
500
300
100
5000
h
FE
,SMALL–SIGNAL
C
URREN
T
GAIN
20
3000
200
500
2000
1000
30
50
300
0.1
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1.0
2.0
5.0
20
100
10
C,
CAP
ACIT
ANCE
(pF)
200
100
70
50
TJ = 25°C
Cib
Cob
50
0.2
0.5
TJ = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
PNP
NPN
PNP
NPN
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相关代理商/技术参数
参数描述
BDX33BG 功能描述:达林顿晶体管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33B-S 功能描述:达林顿晶体管 80V 10A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33C 功能描述:达林顿晶体管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33C 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
BDX33CG 功能描述:达林顿晶体管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
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