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参数资料
型号： BDX33BBU
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 10 A, 80 V, NPN, Si, POWER TRANSISTOR
封装： PLASTIC, TO-220AB, 3 PIN
文件页数： 41/61页
文件大小： 360K
代理商： BDX33BBU
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Index and Cross Reference
1–16
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
BD677
3–188
BD677A
3–188
BD678
3–190
BD678A
3–190
BD679
3–188
BD679A
3–188
BD680
3–190
BD680A
3–190
BD681
3–188
BD682
3–190
BD743D
MJE15030
3–684
BD744
BD808
3–206
BD744A
BD808
3–206
BD744B
BD810
3–206
BD744D
MJE15031
3–684
BD775
BD777
3–192
BD776
3–192
BD777
3–192
BD778
3–192
BD780
3–192
BD785
BD787
3–194
BD786
BD788
3–194
BD787
3–194
BD788
3–194
BD789
3–198
BD790
3–198
BD791
3–198
BD792
3–198
BD801
3–202
BD802
3–204
BD806
BD808
3–206
BD808
3–206
BD809
BD810
3–206
BD810
3–206
BD813
MJE181
3–589
BD814
MJE171
3–589
BD815
MJE182
3–589
BD816
MJE172
3–589
BD817
MJE243
3–596
BD818
MJE253
3–596
BD825
MJE181
3–589
BD826
MJE171
3–589
BD827
MJE182
3–589
BD828
MJE172
3–589
BD829
MJE243
3–596
BD830
MJE253
3–596
BD833
BD787
3–194
BD834
BD788
3–194
BD835
BD787
3–194
BD836
BD788
3–194
BD837
BD789
3–198
BD838
BD790
3–198
BD839
BD790
3–198
BD861
BD677
3–188
BD862
BD678
3–190
BD863
BD677
3–188
BD864
BD678
3–190
BD865
BD679
3–188
BD866
BD680
3–190
BD875
BD775
—
BD876
BD776
3–192
BD877
BD777
3–192
BD878
BD778
3–192
BD880
BD780
3–192
BD905
2N6487
3–132
BD906
2N6490
3–132
BD907
2N6487
3–132
BD908
2N6490
3–132
BD909
2N6488
3–132
BD910
2N6491
3–132
BD933
BD241B
3–174
BD934
BD242B
3–174
BD935
BD241B
3–174
BD936
BD242B
3–174
BD937
BD241B
3–174
BD938
BD242B
3–174
BD939
BD241C
3–174
BD940
BD242C
3–174
BD941
MJE15030
3–684
BD942
MJE15031
3–684
BD951
BD537
—
BD952
BD538
—
BD953
BD241C
3–174
BD954
BD242C
3–174
BD955
MJE15030
3–684
BD956
MJE15031
3–684
BD957
BD775
—
BD977
BD777
3–192
BD978
BD778
3–192
BD980
BD780
3–192
BDT29
TIP31B
3–873
BDT29A
TIP32B
3–873
BDT29B
TIP31B
3–873
BDT29C
TIP31C
3–873
BDT30
TIP30A
—
BDT30B
TIP30B
3–871
BDT30C
TIP30C
3–871
BDT31
TIP31B
3–873
BDT31A
TIP31B
3–873
BDT31B
TIP31B
3–873
BDT31C
TIP31C
3–873
BDT32
TIP32B
3–873
BDT32A
TIP32B
3–873
BDT32B
TIP32B
3–873
BDT32C
TIP32C
3–873
BDT41
TIP41B
3–883
BDT41A
TIP41B
3–883
BDT41B
TIP41B
3–883
BDT41C
TIP41C
3–883
BDT42
TIP42B
3–883
BDT42A
TIP42B
3–883
BDT42B
TIP42B
3–883
BDT42C
TIP42C
3–883
BDT60
TIP125
3–900
BDT60A
TIP126
3–900
BDT60B
TIP127
3–900
BDT60C
BDX53D
—
BDT61
TIP120
3–900
BDT61A
TIP121
3–900
BDT61B
TIP122
3–900
BDT61C
BDX53D
—
BDT62A
BDW46
3–212
BDT62B
BDW47
3–212
BDT62C
BDW47
3–212
BDT63B
BDW42
3–212
BDT63C
BDW42
3–212
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相关代理商/技术参数
参数描述
BDX33BG 功能描述:达林顿晶体管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33B-S 功能描述:达林顿晶体管 80V 10A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33C 功能描述:达林顿晶体管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33C 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
BDX33CG 功能描述:达林顿晶体管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
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