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参数资料
| 型号： | BDX33BBU |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 46/61页 |
| 文件大小： | 360K |
| 代理商： | BDX33BBU |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页当前第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Index and Cross Reference
1–20
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
D44D4
2N6044
3–89
D44D5
2N6044
3–89
D44D6
2N6044
3–89
D44H1
D44H8
3–411
D44H10
3–411
D44H11
3–411
D44H2
D44H8
3–411
D44H4
D44H8
3–411
D44H5
D44H8
3–411
D44H7
D44H8
3–411
D44H8
3–411
D44R1
TIP47
3–887
D44R2
TIP47
3–887
D44R3
TIP48
3–887
D44R4
TIP48
3–887
D44R5
TIP47
3–887
D44R6
TIP48
3–887
D44TD3
MJE16002
3–688
D44TD4
MJE16002
3–688
D44TD5
MJE16002
3–688
D44TE3
MJE16002
3–688
D44TE4
MJE16002
3–688
D44TE5
MJE16002
3–688
D44VH1
D44VH10
3–413
D44VH10
3–413
D44VH4
D44VH10
3–413
D44VH7
D44VH10
3–413
D45C1
D45C12
3–415
D45C10
D45C12
3–415
D45C11
D45C12
3–415
D45C12
3–415
D45C2
D45C12
3–415
D45C3
D45C12
3–415
D45C4
D45C12
3–415
D45C5
D45C12
3–415
D45C6
D45C12
3–415
D45C7
D45C12
3–415
D45C8
D45C12
3–415
D45C9
D45C12
3–415
D45E1
TIP125
3–900
D45E2
TIP126
3–900
D45E3
TIP126
3–900
D45H1
D45H11
3–411
D45H10
3–411
D45H11
3–411
D45H12
D45H11
3–411
D45H2
D45H8
3–411
D45H4
D45H8
3–411
D45H5
D45H8
3–411
D45H7
D45H8
3–411
D45H8
3–411
D45H9
D45H11
3–411
D45VH1
D45VH10
3–413
D45VH10
3–413
D45VH4
D45VH10
3–413
D45VH7
D45VH10
3–413
D56W1
BU208A
3–226
D56W2
BU208A
3–226
D56W3
BU208A
3–226
D56W4
BU208A
3–226
D64VP4
MJ16010
3–512
D64VP5
MJ16010
3–512
D72F5T1
MJD44H11–1
3–550
D72F5T2
MJD44H11
3–550
D72FYD
MJD6039
3–584
D72FYD1
MJD6039–1
3–584
D72K1.5D1
MJD6039–1
3–584
D72K1.5D2
MJD6039
3–584
D72K3D1
MJD6039–1
3–584
D72K3D2
MJD6039
3–584
D73F5T1
MJD44H11–1
3–550
D73F5T2
MJD44H11
3–550
D73FY4D
MJD6039
3–584
D73FY4D1
MJD6039–1
3–584
D73K3D1
MJD6039–1
3–584
D73K3D2
MJD6039
3–584
DTS1010
2N6056
3–97
DTS1020
MJ3001
3–425
DTS401
BUX48A
3–401
DTS402
BUX48A
3–401
DTS4026
MJ10012
3–457
DTS4039
MJ10000
3–433
DTS4040
MJ10000
3–433
DTS4041
MJ10000
3–433
DTS4045
MJ10000
3–433
DTS4059
MJ10000
3–433
DTS4061
MJ10000
3–433
DTS4066
MJ10000
3–433
DTS4067
MJ10000
3–433
DTS4074
MJ10005
3–439
DTS4075
MJ10005
3–439
DTS410
MJ410
3–417
DTS411
MJ423
3–419
DTS413
MJ413
3–419
DTS423
MJ423
3–419
DTS425
BUX48A
3–401
DTS431
MJ423
3–419
DTS660
2N6233
—
DTS663
2N6235
—
DTS665
2N6235
—
DTS701
BU208A
3–226
DTS702
BU208A
3–226
DTS712
BU208A
3–226
DTS714
BU208A
3–226
DTS801
BU208A
3–226
DTS802
BU208A
3–226
DTS804
BU208A
3–226
DTS812
BU208A
3–226
DTS814
BU208A
3–226
FT2955
MJE2955T
3–628
FT3055
MJE3055T
3–628
FT317
MJE15028
3–684
FT317A
MJE15028
3–684
FT317B
MJE15030
3–684
FT401B
BUX48A
3–401
FT402
BUX48A
3–401
FT410
MJ410
3–417
FT411
MJ423
3–419
FT413
MJ413
3–419
FT417
MJE15029
3–684
FT417A
MJE15029
3–684
FT417B
MJE15031
3–684
FT423
MJ423
3–419
FT431
MJ423
3–419
FT47
TIP47
3–887
FT48
TIP48
3–887
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BDX33BG | 功能描述:达林顿晶体管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX33B-S | 功能描述:达林顿晶体管 80V 10A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX33C | 功能描述:达林顿晶体管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| BDX33C | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BDX33CG | 功能描述:达林顿晶体管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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