参数资料
型号: BDX33BBU
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 10 A, 80 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-220AB, 3 PIN
文件页数: 53/61页
文件大小: 360K
代理商: BDX33BBU
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–27
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
NSP41A
TIP41B
3–883
NSP41B
TIP41B
3–883
NSP41C
TIP41C
3–883
NSP42
TIP42B
3–883
NSP42A
TIP42B
3–883
NSP42B
TIP42B
3–883
NSP42C
TIP42C
3–883
NSP4918
TIP32B
3–873
NSP4919
TIP32B
3–873
NSP4920
TIP32B
3–873
NSP4921
TIP31B
3–873
NSP4922
TIP31B
3–873
NSP4923
TIP31B
3–873
NSP5190
TIP31B
3–873
NSP5191
TIP31B
3–873
NSP5192
TIP31B
3–873
NSP5193
TIP32B
3–873
NSP5194
TIP32B
3–873
NSP5195
TIP32C
3–873
NSP520
TIP31B
3–873
NSP521
TIP31B
3–873
NSP575
TIP31B
3–873
NSP576
TIP32B
3–873
NSP577
TIP31B
3–873
NSP578
TIP32B
3–873
NSP579
TIP31B
3–873
NSP580
TIP32B
3–873
NSP581
TIP31C
3–873
NSP582
TIP32C
3–873
NSP585
TIP31B
3–873
NSP586
TIP32B
3–873
NSP587
TIP31B
3–873
NSP588
TIP32B
3–873
NSP589
TIP31B
3–873
NSP590
TIP32B
3–873
NSP595
TIP31B
3–873
NSP596
TIP32B
3–873
NSP597
TIP31B
3–873
NSP5974
TIP42B
3–883
NSP5975
TIP42B
3–883
NSP5976
TIP42B
3–883
NSP5977
TIP41B
3–883
NSP5978
TIP41B
3–883
NSP5979
TIP41B
3–883
NSP598
TIP32B
3–873
NSP5980
2N6490
3–132
NSP5981
2N6490
3–132
NSP5982
2N6491
3–132
NSP5983
2N6487
3–132
NSP5984
2N6487
3–132
NSP5985
2N6488
3–132
NSP599
TIP31B
3–873
NSP600
TIP32B
3–873
NSP695
TIP120
3–900
NSP695A
TIP101
3–891
NSP696
TIP125
3–900
NSP696A
TIP106
3–891
NSP697
TIP120
3–900
NSP697A
TIP101
3–891
NSP698
TIP125
3–900
NSP698A
TIP106
3–891
NSP699
TIP121
3–900
NSP699A
TIP101
3–891
NSP700
TIP126
3–900
NSP700A
TIP106
3–891
NSP701
TIP122
3–900
NSP702
TIP127
3–900
PMD10K–100
2N6059
3–93
PMD10K–40
2N6059
3–93
PMD10K–60
2N6059
3–93
PMD10K–80
2N6059
3–93
PMD11K–100
2N6052
3–93
PMD11K–40
2N6052
3–93
PMD11K–60
2N6052
3–93
PMD11K–80
2N6052
3–93
PMD12K–100
2N6059
3–93
PMD12K–40
MJ1000
3–423
PMD12K–60
MJ1000
3–423
PMD12K–80
MJ1001
3–423
PMD13K–100
2N6052
3–93
PMD1600K
2N6283
3–112
PMD1601K
2N6283
3–112
PMD1602K
2N6283
3–112
PMD1603K
2N6284
3–112
PMD16K–100
2N6284
3–112
PMD16K–40
2N6283
3–112
PMD16K–60
2N6283
3–112
PMD16K–80
2N6283
3–112
PMD1700K
2N6286
3–112
PMD1701K
2N6286
3–112
PMD1702K
2N6286
3–112
PMD1703K
2N6287
3–112
PMD17K–100
2N6287
3–112
PMD17K–40
2N6286
3–112
PMD17K–60
2N6284
3–112
PMD17K–80
2N6286
3–112
PMD20K–120
2N6578
3–144
PMD25K–120
2N6578
3–144
RCA1000
MJ1000
3–423
RCA1001
MJ1001
3–423
RCA120
TIP120
3–900
RCA121
TIP121
3–900
RCA122
TIP122
3–900
RCA125
TIP125
3–900
RCA126
TIP126
3–900
RCA1B01
2N5878
3–74
RCA1B04
MJ15024
3–506
RCA1B05
MJ15024
3–506
RCA1B06
MJ15003
3–500
RCA1B09
MJ15024
3–506
RCA1C03
MJE15028
3–684
RCA1C04
MJE15029
3–684
RCA1C05
TIP41B
3–883
RCA1C06
TIP42C
3–883
RCA1C07
MJE3055T
3–628
RCA1C08
MJE2955T
3–628
RCA1C09
MJE3055T
3–628
RCA1C10
2N6292
3–101
RCA1C11
2N6107
3–101
RCA1C12
MJE15028
3–684
RCA1C13
MJE15029
3–684
RCA1C14
2N6290
RCA1C15
2N6388
3–124
RCA1C16
2N6668
3–147
RCA29
TIP31B
3–873
RCA29A
TIP31B
3–873
相关PDF资料
PDF描述
BDX54B Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
BDX54C Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
BDX54F Complementary Silicon Power Darlington Transistors(互补硅功率达林顿晶体管)
BF304-0PB-006B SINGLE COLOR DISPLAY CLUSTER, SUPER BLUE, 9 mm
BF304-0PB-130B SINGLE COLOR DISPLAY CLUSTER, SUPER BLUE, 9 mm
相关代理商/技术参数
参数描述
BDX33BG 功能描述:达林顿晶体管 10A 80V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33B-S 功能描述:达林顿晶体管 80V 10A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33C 功能描述:达林顿晶体管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
BDX33C 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
BDX33CG 功能描述:达林顿晶体管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel