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| 型号： | EC103D175 |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶闸管产品目录 |
| 文件页数： | 101/224页 |
| 文件大小： | 2697K |
| 代理商： | EC103D175 |
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2002 Teccor Electronics
E0 - 3
http://www.teccor.com
Thyristor Product Catalog
+1 972-580-7777
Electrical Parameter Terminology
Thyristor
di/dt (Critical Rate-of-rise of On-state Current) – Maximum
value of the rate-of-rise of on-state current which a thyristor can
withstand without deleterious effect
dv/dt (Critical Rate-of-rise of Off-state Voltage or Static
dv/dt) – Minimum value of the rate-of-rise of principal voltage
which will cause switching from the off state to the on state
dv/dt(c) Critical Rate-of-rise of Commutation Voltage of a
Triac (Commutating dv/dt) – Minimum value of the rate-of-rise
of principal voltage which will cause switching from the off state
to the on state immediately following on-state current conduction
in the opposite quadrant
I2t (RMS Surge (Non-repetitive) On-state Fusing Current) –
Measure of let-through energy in terms of current and time for
fusing purposes
IBO (Breakover Current) – Principal current at the breakover
point
IDRM (Repetitive Peak Off-state Current) – Maximum leakage
current that may occur under the conditions of VDRM
IGT (Gate Trigger Current) – Minimum gate current required to
switch a thyristor from the off state to the on state
IH (Holding Current) – Minimum principal current required to
maintain the thyristor in the on state
IPP (Peak Pulse Current) – Peak pulse current at a short time
duration and specified waveshape
IRRM (Repetitive Peak Reverse Current) – Maximum leakage
current that may occur under the conditions of VRRM
IS (Switching Current) – Current at VS when a sidac switches
from the clamping state to on state
IT(RMS) (On-state Current) – Anode cathode principal current
that may be allowed under stated conditions, usually the full-
cycle RMS current
ITSM (Surge (Non-repetitive) On-state Current) – Peak single
cycle AC current pulse allowed
PG(AV) (Average Gate Power Dissipation) – Value of gate
power which may be dissipated between the gate and main ter-
minal 1 (or cathode) average over a full cycle
PGM (Peak Gate Power Dissipation) – Maximum power which
may be dissipated between the gate and main terminal 1 (or
cathode) for a specified time duration
RθJA (Thermal Resistance, Junction-to-ambient) – Tempera-
ture difference between the thyristor junction and ambient divided
by the power dissipation causing the temperature difference
under conditions of thermal equilibrium
Note: Ambient is defined as the point where temperature does
not change as a result of the dissipation.
RθJC (Thermal Resistance, Junction-to-case) – Temperature
difference between the thyristor junction and the thyristor case
divided by the power dissipation causing the temperature differ-
ence under conditions of thermal equilibrium
tgt (Gate-controlled Turn-on Time) – Time interval between
the 10% rise of the gate pulse and the 90% rise of the principal
current pulse during switching of a thyristor from the off state to
the on state
tq (Circuit-commutated Turn-off Time) – Time interval
between the instant when the principal current has decreased to
zero after external switching of the principal voltage circuit and
the instant when the SCR is capable of supporting a specified
principal voltage without turning on
VBO (Breakover Voltage) – Principal voltage at the breakover
point
VDRM (Repetitive Peak Off-state Voltage) – Maximum allow-
able instantaneous value of repetitive off-state voltage that may
be applied across a bidirectional thyristor (forward or reverse
direction) or SCR (forward direction only)
VGT (Gate Trigger Voltage) – Minimum gate voltage required to
produce the gate trigger current
VRRM (Repetitive Peak Reverse Voltage) – Maximum allow-
able instantaneous value of a repetitive reverse voltage that may
be applied across an SCR without causing reverse current ava-
lanche
VS (Switching Voltage) – Voltage point after VBO when a sidac
switches from a clamping state to on state
VT (On-state Voltage) – Principal voltage when the thyristor is in
the on state
Diode Rectifiers
IF(AV) (Average Forward Current) – Average forward conduc-
tion current
IFM (Maximum (Peak) Reverse Current) – Maximum reverse
leakage current that may occur at rated VRRM
IF(RMS) (RMS Forward Current) – RMS forward conduction cur-
rent
IFSM (Maximum (Peak) Forward (Non-repetitive) Surge
Current) – Maximum (peak) forward single cycle AC surge cur-
rent allowed for specified duration
VFM (Maximum (Peak) Forward Voltage Drop) – Maximum
(peak) forward voltage drop from the anode to cathode at stated
conditions
VR (Reverse Blocking Voltage) – Maximum allowable DC
reverse blocking voltage that may be applied to the rectifier
VRRM (Maximum (Peak) Repetitive Reverse Voltage) – Maxi-
mum peak allowable value of a repetitive reverse voltage that
may be applied to the rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| EC103D1 | Sensitive SCRs |
| EC103D | Sensitive SCRs |
| EC103D2 | Sensitive SCRs |
| EC103D3 | Sensitive SCRs |
| EC103M1 | PC 8C 8#20 PIN RECP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EC103D1AP | 功能描述:SEN SCR 400V .8A 12A TO92 RoHS:否 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| EC103D1RP | 功能描述:SCR 400V .8A 12uA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| EC103D1WX | 制造商:NXP Semiconductors 功能描述:1000 制造商:NXP Semiconductors 功能描述:EC103D1W/SC-73/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:SCR SENS GATE 400V SC-73 制造商:NXP Semiconductors 功能描述:SCRs 400v Sc-73 Scr Sens Gate |
| EC103D2 | 功能描述:SCR 400V .8A 50uA Sensing RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| EC103D275 | 功能描述:SCR 400V .8A 50uA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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