- 您现在的位置：买卖IC网 > PDF目录97874 > EC103D175 Thyristor Product Catalog PDF资料下载
参数资料
| 型号： | EC103D175 |
| 英文描述： | Thyristor Product Catalog |
| 中文描述： | 晶闸管产品目录 |
| 文件页数： | 91/224页 |
| 文件大小： | 2697K |
| 代理商： | EC103D175 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页当前第91页第92页第93页第94页第95页第96页第97页第98页第99页第100页第101页第102页第103页第104页第105页第106页第107页第108页第109页第110页第111页第112页第113页第114页第115页第116页第117页第118页第119页第120页第121页第122页第123页第124页第125页第126页第127页第128页第129页第130页第131页第132页第133页第134页第135页第136页第137页第138页第139页第140页第141页第142页第143页第144页第145页第146页第147页第148页第149页第150页第151页第152页第153页第154页第155页第156页第157页第158页第159页第160页第161页第162页第163页第164页第165页第166页第167页第168页第169页第170页第171页第172页第173页第174页第175页第176页第177页第178页第179页第180页第181页第182页第183页第184页第185页第186页第187页第188页第189页第190页第191页第192页第193页第194页第195页第196页第197页第198页第199页第200页第201页第202页第203页第204页第205页第206页第207页第208页第209页第210页第211页第212页第213页第214页第215页第216页第217页第218页第219页第220页第221页第222页第223页第224页
AN1008
Application Notes
http://www.teccor.com
AN1008 - 2
2002 Teccor Electronics
+1 972-580-7777
Thyristor Product Catalog
IT: Current Rating
SCR
For RMS and average currents, the restricting factor is usually
confined so that the power dissipated during the on state and as
a result of the junction-to-case thermal resistance will not pro-
duce a junction temperature in excess of the maximum junction
temperature rating. Power dissipation is changed to RMS and
average current ratings for a 60 Hz sine wave with a 180° con-
duction angle. The average current for conduction angles less
than 180° is derated because of the higher RMS current con-
nected with high peak currents. The DC current rating is higher
than the average value for 180° conduction since no RMS com-
ponent is present.
The dissipation for non-sinusoidal waveshapes can be deter-
mined in several ways. Graphically plotting instantaneous dissi-
pation as a function of time is one method. The total maximum
allowable power dissipation (PD) may be determined using the
following equation for temperature rise:
where TJ(max) is the maximum rated junction temperature (at
zero rated current), TC is the actual operating case temperature,
and RθJC is the published junction-to-case thermal resistance.
Transient thermal resistance curves are required for short inter-
val pulses.
Triac
The limiting factor for RMS current is determined by multiplying
power dissipation by thermal resistance. The resulting current
value will ensure an operating junction temperature within maxi-
mum value. For convenience, dissipation is converted to RMS
current at a 360° conduction angle. The same RMS current can
be used at a conduction angle of less than 360°. For information
on non-sinusoidal waveshapes and a discussion of dissipation,
refer to the preceding description of SCR current rating.
ITSM: Peak Surge (Non-repetitive) On-state
Current — SCR and Triac
The peak surge current is the maximum peak current that may be
applied to the device for one full cycle of conduction without
device degradation. The maximum peak current is usually speci-
fied as sinusoidal at 50 Hz or 60 Hz. This rating applies when the
device is conducting rated current before the surge and, thus,
with the junction temperature at rated values before the surge.
The junction temperature will surpass the rated operating tem-
perature during the surge, and the blocking capacity may be
decreased until the device reverts to thermal equilibrium.
The surge-current curve in Figure AN1008.3 illustrates the peak
current that may be applied as a function of surge duration. This
surge curve is not intended to depict an exponential current
decay as a function of applied overload. Instead, the peak current
shown for a given number of cycles is the maximum peak surge
permitted for that time period. The current must be derated so
that the peak junction temperature during the surge overload
does not exceed maximum rated junction temperature if blocking
is to be retained after a surge.
Figure AN1008.3
Peak Surge Current versus Surge Current Duration
ITM: Peak Repetitive On-state Current — SCR and Triac
The ITM rating specifies the maximum peak current that may be
applied to the device during brief pulses. When the device oper-
ates under these circumstances, blocking capability is main-
tained. The minimum pulse duration and shape are defined and
control the applied di/dt. The operating voltage, the duty factor,
the case temperature, and the gate waveform are also defined.
This rating must be followed when high repetitive peak currents
are employed, such as in pulse modulators, capacitive-discharge
circuits, and other applications where snubbers are required.
di/dt: Rate-of-change of On-state Current — SCR and Triac
The di/dt rating specifies the maximum rate-of-rise of current
through a thyristor device during turn-on. The value of principal
voltage prior to turn-on and the magnitude and rise time of the
gate trigger waveform during turn-on are among the conditions
under which the rating applies. If the rate-of-change of current
(di/dt) exceeds this maximum value, or if turn-on with high di/dt
during minimum gate drive occurs (such as dv/dt or overvoltage
events), then localized heating may cause device degradation.
During the first few microseconds of initial turn-on, the effect of
di/dt is more pronounced. The di/dt capability of the thyristor is
greatly increased as soon as the total area of the pellet is in full
conduction.
The di/dt effects that can occur as a result of voltage or transient
turn-on (non-gated) is not related to this rating. The di/dt rating is
specified for maximum junction temperature.
As shown in Figure AN1008.4, the di/dt of a surge current can be
calculated by means of the following equation.
As an example, surge current of 400 A at 60 Hz has a di/dt of
π400/8.3 or 151.4 A/ms.
PD
TJMAX
() TC
–
RθJC
-----------------------------------
=
110
100
1000
10
20
30
40
50
60
80
100
120
150
250
300
400
1000
Surge Current Duration – Full Cycles
Peak
Surge
(Non-repetitive)
On-state
Current
(I
TSM
)–
Amps
40 A TO-218
25 A T0-220
15 A TO-220
1) Gate control may be lost
during and immediately
following surge current interval.
2) Overload may not be repeated
until junction temperature has
returned to steady-state
rated value.
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]:
Maximum Rated Value at Specified
Case Temperature
Notes:
di
dt
-----
π ITM
()
t
------------------
=
相关PDF资料 |
PDF描述 |
|---|---|
| EC103D1 | Sensitive SCRs |
| EC103D | Sensitive SCRs |
| EC103D2 | Sensitive SCRs |
| EC103D3 | Sensitive SCRs |
| EC103M1 | PC 8C 8#20 PIN RECP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| EC103D1AP | 功能描述:SEN SCR 400V .8A 12A TO92 RoHS:否 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| EC103D1RP | 功能描述:SCR 400V .8A 12uA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| EC103D1WX | 制造商:NXP Semiconductors 功能描述:1000 制造商:NXP Semiconductors 功能描述:EC103D1W/SC-73/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:SCR SENS GATE 400V SC-73 制造商:NXP Semiconductors 功能描述:SCRs 400v Sc-73 Scr Sens Gate |
| EC103D2 | 功能描述:SCR 400V .8A 50uA Sensing RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| EC103D275 | 功能描述:SCR 400V .8A 50uA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。