参数资料
型号: K4T56163QI-ZLD50
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
封装: ROHS COMPLIANT, FBGA-84
文件页数: 39/42页
文件大小: 727K
代理商: K4T56163QI-ZLD50
Rev. 1.0 October 2007
DDR2 SDRAM
K4T56163QI
6 of 42
B
C
D
E
F
G
H
J
K
L
A
9.00
± 0.10
6.40
0.80
1.60
# A1 INDEX MARK
0.80 x 8 =
1
2
3
4
5
6
7
8
9
3.20
13
.0
0
±
0.
10
0.8
0
0.8
0
0.
80
11
.2
0
x1
4
=
5.
60
(0.95)
(1.90)
84-
0.45 Solder ball
0.2 M AB
(Post reflow 0.50
± 0.05)
(Datum A)
(Datum B)
A
B
MOLDING AREA
9.00
± 0.10
0.
10
MA
X
0.35
± 0.05
1.10
± 0.10
Bottom
Top
13
.00
±
0.
10
M
N
P
R
#A1
3.2 FBGA Package Dimension(x16)
Unit : mm
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参数描述
K4T56163QN 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:Consumer Memory
K4T56163QN-HCE6000 制造商:Samsung SDI 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray
K4T56163QN-HCE6T00 制造商:Samsung SDI 功能描述:
K4T56163QN-ZCE6T00 制造商:Samsung 功能描述:256 SDRAM X16 - Tape and Reel
K4T56163QN-ZCE7000 制造商:Samsung 功能描述:DDR2 SDRAM 32MX16 47H32M16 PBF FBGA 1.8V PLASTIC 512M - Trays