参数资料
型号: K4T56163QI-ZLD50
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
封装: ROHS COMPLIANT, FBGA-84
文件页数: 41/42页
文件大小: 727K
代理商: K4T56163QI-ZLD50
Rev. 1.0 October 2007
DDR2 SDRAM
K4T56163QI
8 of 42
256Mb
* Reference information: The following tables are address mapping information for other densities
512Mb
1Gb
2Gb
4Gb
Configuration
16Mb x16
# of Banks
4
Bank Address
BA0,BA1
Auto precharge
A10/AP
Row Address
A0 ~ A12
Column Address
A0 ~ A8
Configuration
128Mb x4
64Mb x 8
32Mb x16
# of Banks
4
Bank Address
BA0,BA1
Auto precharge
A10/AP
Row Address
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
Configuration
256Mb x4
128Mb x 8
64Mb x16
# of Banks
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 ~ A13
A0 ~ A12
Column Address
A0 ~ A9,A11
A0 ~ A9
Configuration
512Mb x4
256Mb x 8
128Mb x16
# of Banks
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 ~ A14
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
Configuration
1 Gb x4
512Mb x 8
256Mb x16
# of Banks
8
Bank Address
BA0 ~ BA2
Auto precharge
A10/AP
Row Address
A0 - A15
A0 - A14
Column Address/page size
A0 - A9,A11
A0 - A9
5.0 DDR2 SDRAM Addressing
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