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参数资料
| 型号： | K4T56163QI-ZLD50 |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84 |
| 封装： | ROHS COMPLIANT, FBGA-84 |
| 文件页数： | 40/42页 |
| 文件大小： | 727K |
| 代理商： | K4T56163QI-ZLD50 |
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Rev. 1.0 October 2007
DDR2 SDRAM
K4T56163QI
7 of 42
Symbol
Type
Function
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both
directions of crossing).
CKE
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and out-
put drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active
Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry.
CKE is asynchronous for self refresh exit. After VREF has become stable during the power on and initialization
swquence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF
must be maintained to this input. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during
self refresh.
CS
Input
Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on sys-
tems with multiple Ranks. CS is considered part of the command code.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When
enabled, ODT is only applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal for x16 configuration.
The ODT pin will be ignored if the Extended Mode Register Set(EMRS) is programmed to disable ODT.
RAS, CAS, WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
(L)UDM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coinci-
dent with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only,
the DM loading matches the DQ and DQS loading.
BA0 - BA1
Input
Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is
being applied. Bank address also determines if the mode register or extended mode register is to be accessed during
a MRS or EMRS cycle.
A0 - A12
Input
Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for
Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a
Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2. The address inputs also provide the op-
code during Mode Register Set commands.
DQ
Input/Output Data Input/ Output: Bi-directional data bus.
LDQS, (LDQS)
UDQS, (UDQS)
Input/Output
Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. For the
x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. The data strobes
LDQS and UDQS may be used in single ended mode or paired with optional complementary signals LDQS and UDQS
to provide differential pair signaling to the system during both reads and writes. A control bit at EMRS(1)[A10] enables
or disables all complementary data strobe signals.
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)
x16 LDQS and UDQS
NC
No Connect: No internal electrical connection is present.
VDD/VDDQ
Supply
Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V
VSS/VSSQ
Supply
Ground, DQ Ground
VDDL
Supply
DLL Power Supply: 1.8V +/- 0.1V
VSSDL
Supply
DLL Ground
VREF
Supply
Reference voltage
4.0 Input/Output Functional Description
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相关代理商/技术参数 |
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| K4T56163QN | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:Consumer Memory |
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