参数资料
型号: K4T56163QI-ZLD50
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
封装: ROHS COMPLIANT, FBGA-84
文件页数: 7/42页
文件大小: 727K
代理商: K4T56163QI-ZLD50
Rev. 1.0 October 2007
DDR2 SDRAM
K4T56163QI
15 of 42
Symbol
16Mx16 (K4T56163QI)
Unit
Notes
800@CL=5
800@CL=6
667@CL=5
533@CL=4
400@CL=3
CE7
LE7
CF7
LF7
CE6
LE6
CD5
LD5
CCC
LCC
IDD0
85
80
75
70
mA
IDD1
100
95
908580
mA
IDD2P
1010
101010
mA
IDD2Q
3535
303030
mA
IDD2N
4540
383535
mA
IDD3P-F
3535
303030
mA
IDD3P-S
1010
101010
mA
IDD3N
6055
555050
mA
IDD4W
160
150
140
135
130
mA
IDD4R
180
190
170
160
150
mA
IDD5
100
95
909090
mA
IDD6
10
mA
IDD7
220
215
210
205
200
mA
11.0 DDR2 SDRAM IDD Spec
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K4T56163QN 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:Consumer Memory
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K4T56163QN-ZCE7000 制造商:Samsung 功能描述:DDR2 SDRAM 32MX16 47H32M16 PBF FBGA 1.8V PLASTIC 512M - Trays