参数资料
型号: K4T56163QI-ZLD50
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84
封装: ROHS COMPLIANT, FBGA-84
文件页数: 42/42页
文件大小: 727K
代理商: K4T56163QI-ZLD50
Rev. 1.0 October 2007
DDR2 SDRAM
K4T56163QI
9 of 42
Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal
to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5
x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
VTT
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to VSS
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT
Voltage on any pin relative to VSS
- 0.5 V ~ 2.3 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
6.0 Absolute Maximum DC Ratings
7.0 AC & DC Operating Conditions
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
相关PDF资料
PDF描述
K5A3240YT Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K6R1004C1C 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1C-I12 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
相关代理商/技术参数
参数描述
K4T56163QN 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:Consumer Memory
K4T56163QN-HCE6000 制造商:Samsung SDI 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray
K4T56163QN-HCE6T00 制造商:Samsung SDI 功能描述:
K4T56163QN-ZCE6T00 制造商:Samsung 功能描述:256 SDRAM X16 - Tape and Reel
K4T56163QN-ZCE7000 制造商:Samsung 功能描述:DDR2 SDRAM 32MX16 47H32M16 PBF FBGA 1.8V PLASTIC 512M - Trays