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参数资料
| 型号： | MT45W1MW16BDGB-708 AT |
| 厂商： | Micron Technology Inc |
| 文件页数： | 12/59页 |
| 文件大小： | 0K |
| 描述： | IC PSRAM 16MBIT 104MHZ 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | PSRAM（页） |
| 存储容量： | 16M (1M x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（6x8） |
| 包装： | 托盘 |
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16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Bus Operating Modes
The CE# LOW time is limited by refresh considerations. CE# must not stay LOW longer
than t CEM.
Figure 7:
Page Mode READ Operation (ADV = LOW)
C E#
OE#
WE#
<t C EM
ADDRE SS
ADDRE SS [0]
ADDRE SS ADDRE SS ADDRE SS
[1] [2] [3]
tAA
t APA
t APA
t APA
DATA
D[0]
D[1]
D[2]
D[3]
LB#/UB#
DON’T C ARE
Burst Mode Operation
Burst mode operations enable high-speed synchronous READ and WRITE operations.
Burst operations consist of a multi-clock sequence that must be performed in an
ordered fashion. After CE# goes LOW, the address to access is latched on the next rising
edge of CLK that ADV# is LOW. During this first clock rising edge, WE# indicates whether
the operation is going to be a READ (WE# = HIGH, Figure 8 on page 13) or WRITE (WE#
= LOW, Figure 9 on page 14).
The size of a burst can be specified in the BCR as either fixed-length or continuous.
Fixed-length bursts consist of four, eight, or sixteen words. Continuous bursts have the
ability to start at a specified address and burst through the entire memory. The latency
count stored in the BCR defines the number of clock cycles that elapse before the initial
data value is transferred between the processor and CellularRAM device.
The WAIT output will be asserted as soon as CE# goes LOW and will be de-asserted to
indicate when data is to be transferred into (or out of ) the memory. WAIT will again be
asserted if the burst crosses the boundary between 128-word rows. Once the Cellu-
larRAM device has restored the previous row’s data and accessed the next row, WAIT will
be de-asserted and the burst can continue (see Figure 33 on page 43).
The processor can access other devices without incurring the timing penalty of the
initial latency for a new burst by suspending burst mode. Bursts are suspended by stop-
ping CLK. CLK can be stopped HIGH or LOW. If another device will use the data bus
while the burst is suspended, OE# should be taken HIGH to disable the CellularRAM
outputs; otherwise, OE# can remain LOW. Note that the WAIT output will continue to be
active, and as a result no other devices should directly share the WAIT connection to the
controller. To continue the burst sequence, OE# is taken LOW, then CLK is restarted after
valid data is available on the bus.
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2005 Micron Technology, Inc. All rights reserved.
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| MT45W1MW16PABA-70 WT | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT45W1MW16PABA-70 WT TR | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W1MW16PAFA-70 WT | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT45W1MW16PAFA-70 WT TR | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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