- 您现在的位置：买卖IC网 > Datasheet目录345 > MT45W1MW16BDGB-708 AT (Micron Technology Inc)IC PSRAM 16MBIT 104MHZ 54VFBGA Datasheet资料下载
参数资料
| 型号： | MT45W1MW16BDGB-708 AT |
| 厂商： | Micron Technology Inc |
| 文件页数： | 18/59页 |
| 文件大小： | 0K |
| 描述： | IC PSRAM 16MBIT 104MHZ 54VFBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | PSRAM（页） |
| 存储容量： | 16M (1M x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（6x8） |
| 包装： | 托盘 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Low-Power Operation
Low-Power Operation
Standby Mode Operation
During standby, the device current consumption is reduced to the level necessary to
perform the DRAM refresh operation. Standby operation occurs when CE# is HIGH.
The device will enter a reduced power state upon completion of a READ or WRITE oper-
ation or when the address and control inputs remain static for an extended period of
time. This mode will continue until a change occurs to the address or control inputs.
Temperature-Compensated Refresh
Temperature-compensated refresh (TCR) allows for adequate refresh at different
temperatures. This CellularRAM device includes an on-chip temperature sensor. When
the sensor is enabled, it continually adjusts the refresh rate according to the operating
temperature. The on-chip sensor is enabled by default.
Three fixed refresh rates are also available, corresponding to temperature thresholds of
+15°C, +45°C, and +85°C. The setting selected must be for a temperature higher than the
case temperature of the CellularRAM device. If the case temperature is +35°C, the system
can minimize self refresh current consumption by selecting the +45°C setting. The +15°C
setting would result in inadequate refreshing and cause data corruption.
Partial-Array Refresh
Partial-array refresh (PAR) restricts refresh operation to a portion of the total memory
array. This feature enables the device to reduce standby current by refreshing only that
part of the memory array required by the host system. The refresh options are full array,
one-half array, one-quarter array, one-eighth array, or none of the array. The mapping of
these partitions can start at either the beginning or the end of the address map (see
Table 6 on page 28). READ and WRITE operations to address ranges receiving refresh will
not be affected. Data stored in addresses not receiving refresh will become corrupted.
When re-enabling additional portions of the array, the new portions are available imme-
diately upon writing to the RCR.
Deep Power-Down Operation
Deep power-down (DPD) operation disables all refresh-related activity. This mode is
used if the system does not require the storage provided by the CellularRAM device. Any
stored data will become corrupted when DPD is enabled. When refresh activity has been
re-enabled by rewriting the RCR, the CellularRAM device will require 150μs to perform
an initialization procedure before normal operations can resume. During this 150μs
period, the current consumption will be higher than the specified standby levels, but
considerably lower than the active current specification.
DPD cannot be enabled or disabled by writing to the RCR using the software access
sequence; the RCR should be accessed using CRE instead.
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
18
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2005 Micron Technology, Inc. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MT48H32M16LFB4-75B IT:C | IC SDRAM 512MB 54VFBGA |
| MT48H8M16LFB4-75 IT:K TR | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| MTC100-JA2-P34 | CONTACT INSERT PIN |
| MX841BE | IC CONVERTER WHITE LED 8-SOIC |
| MXHV9910BTR | IC LED DRIVER HIGH BRIGHT 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT45W1MW16BP23ZWC2 | 制造商:Micron Technology Inc 功能描述:1MX16 PSRAM DIE-COM 1.8V BURST PSEUDO STATIC 1.8V I/O - Bulk |
| MT45W1MW16PABA-70 WT | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT45W1MW16PABA-70 WT TR | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT45W1MW16PAFA-70 WT | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT45W1MW16PAFA-70 WT TR | 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
发布紧急采购，3分钟左右您将得到回复。