参数资料
型号: MT45W1MW16BDGB-708 AT
厂商: Micron Technology Inc
文件页数: 9/59页
文件大小: 0K
描述: IC PSRAM 16MBIT 104MHZ 54VFBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: PSRAM(页)
存储容量: 16M (1M x 16)
速度: 70ns
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 105°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(6x8)
包装: 托盘
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Part Numbering Information
Part Numbering Information
Micron CellularRAM devices are available in several different configurations and densi-
ties (see Figure 3).
Figure 3:
Part Number Chart
M T 45
W 1 M W
16
B D GB - 70
8
WT ES
Micron Technology
Product Family
45 = PSRAM/CellularRAM Memory
Operating Core Voltage
W = 1.7–1.95V
Production Status
Blank = Production
ES = Engineering Sample
MS = Mechanical Sample
Operating Temperature
WT = –30°C to +85°C (see Note 1)
IT = –40°C to +85°C (contact factory)
Address Locations
M = Megabits
Standby Power Options
Blank = Standard
Operating Voltage
W = 1.7–3.6V (see Note 1)
Bus Configuration
Frequency
8 = 80 MHz
1 = 104 MHz
16 = x16
Access/Cycle Time
READ/WRITE Operation Mode
BD = Asynchronous/Page/Burst
Package Codes
GB = VFBGA “green” (6 x 9 grid, 0.75mm pitch, 6.0mm x 8.0mm x 1.0mm) 54-ball
70 = 70ns
Notes:
1. 3.6V I/O and –30°C exceed the CellularRAM Workgroup 1.0 specifications.
Valid Part Number Combinations
After building the part number from the part numbering chart above, visit to the Micron
Part Marking Decoder Web site at www.micron.com/partsearch to verify that the part
number is offered and valid. If the device required is not on this list, contact the factory.
Device Marking
Due to the size of the package, the Micron standard part number is not printed on the
top of the device. Instead, an abbreviated device mark comprised of a five-digit alphanu-
meric code is used. The abbreviated device marks are cross-referenced to the Micron
part numbers at www.micron.com/partsearch . To view the location of the abbreviated
mark on the device, refer to customer service note, CSN-11, “Product Mark/Label” at
www.micron.com/csn .
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2005 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
MT48H32M16LFB4-75B IT:C IC SDRAM 512MB 54VFBGA
MT48H8M16LFB4-75 IT:K TR IC SDRAM 128MBIT 133MHZ 54VFBGA
MTC100-JA2-P34 CONTACT INSERT PIN
MX841BE IC CONVERTER WHITE LED 8-SOIC
MXHV9910BTR IC LED DRIVER HIGH BRIGHT 8-SOIC
相关代理商/技术参数
参数描述
MT45W1MW16BP23ZWC2 制造商:Micron Technology Inc 功能描述:1MX16 PSRAM DIE-COM 1.8V BURST PSEUDO STATIC 1.8V I/O - Bulk
MT45W1MW16PABA-70 WT 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
MT45W1MW16PABA-70 WT TR 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA(7x7) 包装:托盘
MT45W1MW16PAFA-70 WT 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
MT45W1MW16PAFA-70 WT TR 功能描述:IC PSRAM 16MBIT 70NS 48VFBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA(7x7) 包装:托盘